PTFB181702FC-V1-R0

Series:	--
Packaging:	Cut Tape (CT)
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	1.88GHz
Gain:	19dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	1.3A
Power - Output:	30W
Voltage - Rated:	65V
Package / Case:	H-37248-4
Supplier Device Package:	H-37248-4

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Introduction

The PTFB181702FC-V1-R0 is a N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), specifically designed for radio frequencies (RF). It is suitable for applications in low-power, low-voltage and high-speed switching, making it a perfect choice for designers in the telecommunications, automotive, industrial and healthcare industries.MOSFETs are special types of transistors that operate on the principles of capacitance and resistance. In order to understand the working principle of this particular MOSFET and how it can be applied, it is important to first discuss basic transistor functionality.

Transistors

A transistor is a three-terminal semiconductor device used to amplify and switch electrical currents. It consists of three layers of semiconductor material - the base, the collector and the emitter - each of which acts as an electrode. When a small current is applied to the base terminal, a larger current is allowed to flow between the collector and emitter, making it possible to amplify or switch electrical signals.Transistors come in two different types - Bipolar Junction Transistors (BJTs) and Field-Effect Transistors (FETs). BJTs consist of two layers of semiconductor material, while FETs consist of three. FETs are further divided into two categories: Junction FETs (JFETs), and Metal-Oxide-Semiconductor FETs (MOSFETs).

MOSFETs

MOSFETs are the most common type of FETs and are used in a wide variety of applications. Unlike BJTs, MOSFETs do not require a small current to be applied to the base in order to allow the larger current to pass through. Instead, the voltage applied to the gate terminal of the MOSFET controls the flow of current.There are two types of MOSFETs: N-channel, and P-channel. The PTFB181702FC-V1-R0 is an N-channel MOSFET. As the name implies, N-channel devices have a negative charge on the gate, which allows them to easily allow current to flow when a positive voltage is applied to the gate.

Application Field and Working Principle of the PTFB181702FC-V1-R0

The PTFB181702FC-V1-R0 is specifically designed for radio-frequency applications. It is suitable for use in low-voltage, low-power and high-speed switching, making it ideal for use in a variety of sectors including telecommunications, automotive, industrial and healthcare.The PTFB181702FC-V1-R0 is an enhancement-mode N-channel MOSFET. As such, it requires a positive voltage to be applied to the gate in order to allow current to flow through the drain-source channel. The threshold voltage of this device is very low at -1.1V, making it well-suited for use in low-voltage, low-power applications. Additionally, this device has a maximum drain current rating of 0.309A, making it a good choice for high-speed switching.The PTFB181702FC-V1-R0 also has a maximum drain source voltage rating of 25V, making it suitable for use in a wide variety of applications. The device also has a high switching speed and low power consumption, further enhancing its attractiveness.In conclusion, the PTFB181702FC-V1-R0 is a highly reliable and efficient N-channel MOSFET, specifically designed for radio frequency applications. It offers low threshold voltage, high drain current and drain source voltage ratings, making it a perfect choice for low-voltage, low-power and high-speed switching applications. Additionally, its high switching speed and low power consumption further enhance its attractiveness as an ideal solution for designers in the telecommunications, automotive, industrial and healthcare industries.

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