PTFB090901EA-V2-R0

Series:	--
Packaging:	Cut Tape (CT)
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	960MHz
Gain:	19.5dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	650mA
Power - Output:	25W
Voltage - Rated:	65V
Package / Case:	H-36265-2
Supplier Device Package:	H-36265-2

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PTFB090901EA-V2-R0 refers to an n-type enhancement mode metal oxide semiconductor field effect transistor (MOSFET), which is one of the few highly integrated and versatile components used for a variety of RF applications. This MOSFET has wide operating voltage ranges and is capable of handling large currents with low on-state losses, making it ideal for most motor-driving, computer, and power electronic applications.The PTFB090901EA-V2-R0 is designed on the n-type MOSFET chip process with high efficiency and good stability. It has a single-ended input and also has an output interface that is used to provide power to the system or device. The device has an integrated self-adjusting thermal protection mechanism that limits its temperature to a safe level and prevents it from overheating.The metal oxide semiconductor field effect transistor uses a P type material called the gate oxide layer to control the flow of electrons between two substrates. This layer is sandwiched between a source and a drain element, which are electrically insulated barriers. When the voltage across the MOSFET\'s gate and the source element increases, electrons flow across the gate oxide layer and turn off the transistor, allowing electrical current to flow from the source to the drain. By varying the voltage across the gate, the MOSFET can be used to control the flow of electrons from the source to the drain.The PTFB090901EA-V2-R0 is capable of working in a wide range of temperatures and can easily be integrated into existing systems. It can also be used in applications where high switching speed is required, such as in car electronics, robotic systems, and home appliances. This device is also used to control power in systems that require reliable performance and long life-span such as in medical devices and computers.The device also incorporates several technologies that reduce switching losses such as bypass capacitors and an internal gate resistance. The gate resistance ensures that the device maintains a low on-state voltage while providing a low voltage drop. This in turn reduces the amount of power that is consumed by the device, making it more economical and energy efficient.The PTFB090901EA-V2-R0 device is also extremely reliable and has a low failure rate compared to other MOSFETs. The device is also resistant to ESD, making it ideal for ESD-sensitive designs. This device is also designed with an in-built protection circuit that prevents it from burning out due to overcurrent.Overall, the PTFB090901EA-V2-R0 is a highly integrated and versatile MOSFET device that is ideal for a variety of RF applications. With its wide operating voltage ranges, low on-state losses and efficient thermal protection mechanism, the device is perfectly suited for motor-driving, computer, and power electronic applications. Its low-failure rate and ESD protection make it a reliable choice for ESD-sensitive designs. Additionally, its low power consumption makes it an economical choice for energy efficient applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description