PTFB213208FV-V2-R2

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Introduction

The PTFB213208FV-V2-R2 (hereafter referred to as the FV) is a highly advanced field effect transistor (FET). It is part of an expanding range of Radio-Frequency (RF) products designed and manufactured by Powertip Technology. This specific device is ideal for applications in the RF communications and industrial sectors.

Characteristics

The FV is a N-channel enhancement-mode FET that has an innovative dual-gate structure. This allows the device to achieve efficiency improvements over traditional solutions. It has a maximum rated gate voltage of +15V and a gate-source capacitance of 1.6pF. The device also has excellent immunity to electro-magnetic interference, enabling it to be used in a wide variety of applications. It also has a maximum current handling capacity of 2A and an on-resistance of 185Ω at 25°C.

Application Field

The FV is an ideal choice for applications in the RF communications and industrial sectors. It is suitable for use in a range of devices, such as mobile phones, base stations, wireless networking equipment and automotive electronics. The device\'s dual-gate structure ensures that the unit can provide higher efficiency than traditional FETs. Furthermore, its Low-Noise (LN) and Low Drain-Source On-state Resistance (RDS(on)) characteristics make it suitable for use in a variety of low-noise applications.

Working Principle

The working principle of the FV is based on the effect of an electric field on a semiconductor body. The FV comprises of a source, drain, gate and substrate. When an appropriate voltage is applied to the gate, a thin layer of positively charged holes forms in the substrate adjacent to the gate (the channel region). This causes the resistance between the source and drain to be greatly reduced allowing a large current to flow. The FV can be used in a variety of operating modes such as enhancement (for low-noise applications) and depletion (for switching purposes).

Conclusion

The PTFB213208FV-V2-R2 is a highly advanced field effect transistor that is ideal for applications in the RF communications and industrial sectors.Its dual-gate structure enables the unit to achieve efficiency improvements over traditional FETs. Furthermore, its Low-Noise and Low Drain-Source On-state Resistance characteristics make it suitable for use in a variety of low-noise applications. The working principle of the FV is based on the effect of an electric field on a semiconductor body. This makes it a highly reliable and versatile device making it suitable for a variety of applications.

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