PTFB192503FL-V2-R250

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PTFB192503FL-V2-R250 is a transistor commonly used in Radio Frequency (RF) applications for its high-performance capabilities. It is a surface-mount solution and is part of a family of Power Field Effect Transistors (PowerFETs) created by Vishay Intertechnology. The R250 version of this transistor offers outstanding radio-frequency characteristics with a wide range of operating values and is suitable for achieving greater power levels while operating at frequencies as high as 1.9 GHz.

This Vishay PTFB192503FL-V2-R250 is a N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a drain-source voltage of 30 V and a drain-to-gate voltage of 30 V. It has a very low on-state resistance (only 2.4 Ohms) which makes it effective for low-voltage applications with low-current draws. It can achieve a maximum power dissipation rating of 150 Watt at frequencies as high as 2 GHz.

The PTFB192503FL-V2-R250 is also very versatile when used in radio-frequency (RF) applications. It has a wide operating temperature range of -55°C to 175°C and its low-capacitance features make it ideal for high-speed switching applications. The high-drain current capabilities of up to 10.7A at 175°C also make it suitable for high-powered solutions.

In terms of its operation, the N-Channel MOSFET has a unique working principle which makes it suitable for numerous applications. It is based on the electro-static gate control of the drain current. The gate voltage applied to the MOSFET determines the drain current: when the gate voltage is low, the drain current is very low, and when the gate voltage is high, the drain current is high. This makes the MOSFET very useful for providing non-linear control of power by applying a certain voltage to the gate electrode.

The PTFB192503FL-V2-R250 is a very useful transistor for RF applications and is used for a wide range of applications. It can be used to switch high voltages at high frequencies, such as in cellular base stations, RF amplifiers, high-power radio-components, and even frequency conversion. It is also used to increase the dynamic range in power amplifiers and can be used to create noise-cancelling circuits.

The PTFB192503FL-V2-R250 is a very versatile and powerful transistor, suitable for a wide range of radio-frequency applications. Its unique working principle of electro-static gate control and its high-performance capabilities make it a great choice for engineers and enthusiasts looking for a reliable and efficient transistor solution.

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