PTFB093608FV-V3-R2

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The PTFB093608FV-V3-R2 is a radio frequency (RF) compound semiconductor field effect transistor (FET). A field effect transistor is a type of transistor capable of controlling the electrical conductivity of a semiconductor material using an electric field to modulate the voltage drop across the transistor and the drain-source current. The PTFB093608FV-V3-R2 is a planar dual N-type FET with two sources and two drain pads, fabricated using a process of gate contacts over a highly doped silicon substrate. The FET is specifically designed for radio frequency ( RF) applications, such as cellular/mobile/wireless communication, digital subscriber lines (DSL) and CATV applications.

The PTFB093608FV-V3-R2 is a symmetric dual N-type FET with a source termination resistance of 5.3 Ohms. It has a breakdown voltage of 8V and voltage gain of 11.5 dB at 250 MHz. The gate capacitance of the FET is 30 pF, providing a high frequency capability. Due to the FET’s low parasitic gate resistance and the small source resistance of 7.2 Ohms, the FET exhibits excellent linearity in the RF domain, making it suitable for communication applications using signals containing complex modulation.

The PTFB093608FV-V3-R2 is an attractive device for RF power amplification applications. It is capable of producing a Drain to Source current of 2 amps under an applied Drain-Source Voltage of 15 volts at a frequency of 2.6 GHz. Operating at low frequencies or in Class E or A operation, it can produce a maximum output power of 18 Watts. The FET also has high input power gain and excellent power added efficiency when compared to other FETs.

Due to the low source resistance and excellent linearity, the PTFB093608FV-V3-R2 is well suited for distributed amplifier applications. In a distributed amplifier, the FET’s low source resistance allows for the splitting of the input signal, resulting in a larger signal gain across the FET with less power dissipation from the amplifier. The linearity of the FET also allows for the distribution of a complex modulated signal, such as the signals used for wireless communications. The FET’s high gate capacitance is also beneficial in distributed amplifier applications, as it allows for greater levels of gain and power efficiency.

The PTFB093608FV-V3-R2 is a versatile device in RF applications. It is capable of producing high levels of power with very little dissipation. Its low-source resistance and high gate capacitance combine to give it excellent linearity and power gain. In addition, its symmetric configuration makes it well suited for distributed amplifier applications. This FET is an excellent choice for RF power amplifiers and distributed amplifiers in cellular and wireless communication applications.

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