PTFB082817FHV1XWSA1

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The PTFB082817FHV1XWSA1 is a self-biased N-channel monolithic microwave integrated circuit (MMIC) power amplifier module and is widely utilized for radio frequency (RF) applications. It is engineered in accordance with Gallium Arsenide (GaAs) production process, and has a low noise figure, high power supply range and high gain.

The PTFB082817FHV1XWSA1 integrates a differential high gain power amplifier design, which helps achieving an excellent linearity and enhanced input return loss performance. The N-channel MOSFET configuration in combination with low thermostatic noise allows the excellent output power and high linearity operation. The gain control and output mute features help enhancing the system performance, especially in the applications with up to 700 MHz bandwidth.

The module’s field-effect transistor (FET) configuration provides excellent wideband noise characteristics, making it suitable for ultra-low noise amplifiers (LNAs) and RF front-end modules (RF-FEMs) applications. Its wide dynamic power range offers superior linearity and P1dB output power rectification. The advanced device layout system of PTFB082817FHV1XWSA1 helps achieving an excellent linearity and excellent input return loss.

The working principle of PTFB082817FHV1XWSA1 is quite simple yet effective. It consists of two cascaded stages, a differential amplifier and an output power amplifier. The differential amplifier has dual input transistors and is the primary element in the amplification chain. Its negative feedback ensures that the output of the amplifier remains linear for small signal frequency applications. On the other hand, the output stage is the main amplifier stage of the module, operating as an emitter follower. Here, the emitter follows the voltage of the base, allowing the output voltage to track the input voltage. The level of voltage gain is set by the ratio of the two resistors, R1 and R2, while the output impedance is determined by the value of R2 alone.

PTFB082817FHV1XWSA1 is an ideal choice for those pursuing an efficient, high performance power amplifier module for their RF applications. Its wideband noise characteristics make it suitable for ultra-low noise amplifiers (LNAs) and RF front-end modules (RF-FEMs) applications, and its integrated differential amplifier design helps in achieving an excellent linearity and enhanced input return loss performance. Moreover, with its low thermostatic noise, it ensures excellent output power and high linearity operation.

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