PTFB072707FH-V1-R0

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The PTFB072707FH-V1-R0 is a radio-frequency field effect transistor (RF FET) with a V1 package. This type of transistor is beneficial for radio-frequency applications, including amplifiers, switching circuits, and oscillators. The main aim of using this type of transistor is to minimize cross-talk, due to its ability to operate over a wide frequency range. The PTFB072707FH-V1-R0 RF FET features an output stage with two parts, a drain side and a source side. It is commonly used in radio-frequency systems, including communication systems and VHF/UHF radio receivers.

The PTFB072707FH-V1-R0 can also be beneficial for back-off circuit design and automatic gain control (AGC). It is useful to minimize distortion and maximize performance of the transmitter. The fact that it can be used to generate pulses and control phase is another feature of this transistor. The technical parameters of the PTFB072707FH-V1-R0 include a drain voltage of 4 V, a maximum drain current of 80 mA, a gain linearity of 5.5 dB, and a total current noise of 4.3 mA.

The PTFB072707FH-V1-R0 RF FET is a common-source type FET aligned in an amplifier configuration. Its operation is based on an N-channel MOSFET. An input voltage is applied to the gate terminal, which produces a current flow between the drain and source terminals. The current flow is determined by the amount of charge that accumulates in the gate terminal. This results in a voltage across the drain-source terminals, which provides amplification of the input voltage. This type of transistor is beneficial due to its low power requirements and its ability to amplify signals over a wide frequency range.

The key parameters of the PTFB072707FH-V1-R0 RF FET include a frequency range of 1 MHz to 10 GHz. It has an operating temperature range of -40°C to +85°C, with a drain-source breakdown voltage of 55 volts. The maximum output power of the FET is 200 mW and its junction temperature is 125°C. The FET also has a low signal power efficiency rating of 8 dB.

The PTFB072707FH-V1-R0 is a great choice for radio-frequency applications. It can be used in switching circuits, low noise oscillators, and amplifiers. Due to its low power requirements, wide frequency range operation, and low signal power efficiency, it is a great choice for radio-frequency amplification. It can also be used in back-off circuit design and automatic gain control applications, to maximize performance of the transmitter.

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