PTFB210801FA-V1-R0

Series:	--
Packaging:	Cut Tape (CT)
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	2.17GHz
Gain:	18.5dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	750mA
Power - Output:	20W
Voltage - Rated:	65V
Package / Case:	H-37248-2
Supplier Device Package:	H-37265-2

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Introduction

The PTFB210801FA-V1-R0 is a silicon N-channel field effect transistor manufactured by NXP, sometimes referred to as an FET or MOSFET. N-channel FET transistors have a higher current capacity compared to their P-channel counterparts, making them popular as power switches in various applications. In radio frequency applications, NXP’s PTFB210801FA-V1-R0 can be particularly useful due to its low on-conductance, high switching speed, and moderately low threshold voltage. In this article, we will explore the PTFB210801FA-V1-R0’s applications and its working principle.

Applications

NXP’s PTFB210801FA-V1-R0 is suitable for a range of high frequency and low power applications. It is commonly used as a power switch in audio and video equipment, as well as in radio transmitters and receivers. It can also be used in applications such as rapid switching of loads in switching power supplies, remote control systems, and voltage regulators. In automotive electronics, FET transistors are used in engine control units and to control the movement of the vehicle’s power windows and door locks.

Working Principle

FET transistors work on the same principle as bipolar transistors, but with a major difference. In bipolar transistors, current is conducted through a base region that is sandwiched between two other regions, known as the emitter and collector. In FET transistors, current is conducted through a channel in between two terminals, known as the source and drain. The p-type or n-type material used in the channel is the defining feature of whether the transistor is a P-channel or an N-channel FET.The PTFB210801FA-V1-R0 is an N-channel transistor, so its channel is composed of n-type material. To start conducting current through the channel, a low level of voltage needs to be applied to the gate terminal. This voltage, known as the gate-source voltage, attracts mobile electrons and forms a conductive channel between the source and drain. When the gate-source voltage exceeds the threshold voltage of the transistor, the channel is formed and the FET transistor is said to be in its “on” state.When the gate-source voltage is decreasing, the mobile electrons in the channel will begin to look for other places to go. This process is called “punch through”, and it can cause the FET transistor to shut off abruptly and turn off the current. To reduce the chances of punch through, the threshold voltage should be kept relatively low. The threshold voltage of the PTFB210801FA-V1-R0 is approximately 2V.

Conclusion

The PTFB210801FA-V1-R0 is a popular N-channel field effect transistor manufactured by NXP. It is suitable for a range of high frequency and low power applications, such as audio and video equipment, radio transmitters and receivers, switching power supplies, remote control systems, and voltage regulators. It is characterized by its low on-conductance, high switching speed, and moderately low threshold voltage. The working principles of FET transistors depend upon an electric field to form a channel between the source and the drain terminals, allowing current to flow.

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