PTFB092707FH-V1-R250

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PTFB092707FH-V1-R250 is a N-channel MOSFET RF power transistor designed and manufactured by RF Integrated Circuits. It is designed for applications requiring high linearity, low distortion and high efficiency.

The PTFB092707FH-V1-R250 is a single junction FET. Its MOS structure consists of four main layers: a P-type substrate, an N-type epitaxial layer, a narrow strip-gate channel, and an insulated-gate. The insulated-gate controls the amount of current flowing between the source and the drain. The substrate acts as a field plate, which reduces gate-to-drain capacitance and enables higher power levels to be reached.

The PTFB092707FH-V1-R250 is designed specifically for use in RF transmitter and amplifier applications. Its high linearity ensures that it can accurately modulate signals, while its low distortion ensures that it will not introduce audio or visual distortions. Its high efficiency allows it to perform its functions with minimal energy consumption, making it an ideal choice for battery operated devices with power requirements in the Watts range.

The PTFB092707FH-V1-R250 features a high maximum power dissipation at 8 Watts, an operating drain-to-source voltage (Vds) of 20 V and a breakdown voltage (Vdss) of 30 V. It also features a maximum drain current (Id) of 7 A and a typical drain efficiency (ηd) of 65%. An air cavity package with a thermal resistance of 30°C/W is available for this device, and it provides improved heat dissipation.

The PTFB092707FH-V1-R250 is designed to operate in the frequency range of 350 MHz to 2.5 GHz and can be used as a single amplifier or in a cascode configuration. It has a typical gain flatness of 15 dB and a typical noise figure of 0.6 dB. It also has good input and output isolation of greater than 20 dB at 2.5 GHz. It is manufactured using an electromechanical isolation process, which avoids any interaction between the RF terminations and the semiconductor structure, so it allows for reliable operation through temperature cycling and over a wide range of frequencies.

In summary, the PTFB092707FH-V1-R250 is an N-channel MOSFET RF power transistor designed for use in transmitters and amplifiers. It is designed for high linearity, low distortion and high efficiency. Its air cavity package allows for improved heat dissipation and its RF terminations ensure reliable operation through temperature cycling and over a wide range of frequencies. It is an ideal choice for battery operated devices with power requirements in the Watts range.

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