PTFB182503FL-V2-R0

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The PTFB182503FL-V2-R0 FET is a high-frequency RF power transistor from RF MDX. It is used in a wide range of applications, from military and commercial aviation to cell phones and GPS systems for both indoor and outdoor use. Its exceptional power combines with low-noise operation to provide reliable, long-life performance in a variety of circuit configurations.

This FET has an output power of 20 Watts of peak power and operates over a frequency range of 250 MHz to 4 GHz. It has very low parasitic capacitance and excellent noise characteristics. It has an effective gate capacitance of 4.8 pF and a drain-to-source on-resistance of 0.25 ohms. It has a package body of 4 pins (2 gate pins, 1 drain and 1 source).

Applications

The PTFB182503FL-V2-R0 FET is suited for a wide range of RF and wireless applications, including:

• GPS tracking systems
• HDTV amplifiers
• Directional Couplers and Filters
• Wireless base stations
• Test instrumentation
• Wireless LAN
• Cellular/PCS systems

Working Principle

The PTFB182503FL-V2-R0 FET is a high-frequency, low-noise RF power transistor. It utilizes a field-effect technology which works by using an electrical field to control the movement of electrons. This field allows the transistor to be “turned on” or “turned off”, allowing it to amplify or attenuate signals over a very wide frequency range. Transistors are also used to construct inverters, logic gates and other digital circuits.

The FET functions by creating an electrostatic field between its gate and source which causes a shift in the current from the source to the drain. This shift is known as the gate-to-source voltage or the gate-source voltage, and the drain current that is created is the drain current. The amount of the drain current is controlled by the voltage of the gate, allowing it to be used to control and modulate the output power of the transistor.

The FET is also very low power consumption and has a wide range of uses. It is very versatile and can be used to amplify signals across a wide range of frequencies. It can also be used to create logic gates and various other digital circuits. It is also used in many communications devices and military applications.

Conclusion

The PTFB182503FL-V2-R0 FET is a powerful, low-power, and high-frequency RF power transistor suitable for a wide range of applications. Its low parasitic capacitance and excellent noise characteristics make it ideal for communications devices and military applications. Its excellent power, frequency range, and low-noise operation make it an excellent choice for both indoor and outdoor applications.

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