PTFB093608FVV2R250XTMA1

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The PTFB093608FVV2R250XTMA1 is an integrated radio-frequency field effect transistor (RF FET) designed and manufactured by NXP Semiconductors. This NXP RF FET has been designed to be used in wireless communication applications such as Cellular, WiFi and GPS.

The PTFB093608FVV2R250XTMA1 has an integrated drain current level of 50A and an integrated source current level of 2A. It has a drain-source voltage of VCE(max)=32V, and a Gate-source voltage of Vgs(max)=12V. The PTFB093608FVV2R250XTMA1 has a power dissipation of 200mW, an equivalent noise figure of 4dB, and a spectral 1dB gain of 7.5dB.

The application field of PTFB093608FVV2R250XTMA1 includes cellular and WiFi communication, GPS, and general purpose RF applications. This device can be used in a wide range of applications such as cellular and WiFi base-stations, cellular handset and modem applications, and GPS receivers.

The working principle of PTFB093608FVV2R250XTMA1 is based on MOS (metal-oxide semiconductor) technology. It consists of an insulated gate, a thin gate insulating layer and a lightly doped semiconductor channel region. The channel region is connected to the source and drain electrodes, which provide the electronic path for current flow. When a voltage is applied to the gate electrode, it attracts the electrons in the channel region to the gate, increasing the conductivity across the channel region. This results in an increase in the drain current. The size of the increase in the drain current is proportional to the applied voltage, thus providing the PTFB093608FVV2R250XTMA1 with variable gain control.

The PTFB093608FVV2R250XTMA1 is a reliable and efficient RF FET and is suitable for a wide variety of wireless communication applications. It has a high current and voltage capability and a low equivalent noise figure and spectral gain. These characteristics make it an ideal choice for applications such as base-stations, modems and GPS receivers.

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