PTFB201402FC-V1-R250

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The PTFB201402FC-V1-R250 is a N-channel MOSFET with excellent RF performance for various RF applications. It has an RF isolation of -250 dBc and a maximum nominal drain-source voltage of 30 V. It is designed with low on-state resistance, low gate charge and low switching times, making it suitable for a wide range of applications.This device is made up of a silicon substrate, a source, drain and gate terminal, and a gate oxide. An N-channel is formed between the source and drain, and the gate is used to control the current of the N-channel. When a positive voltage is applied to the gate, a channel is formed between the source and drain, allowing current to flow. When the voltage is removed, the channel is closed and current is prevented from flowing.The PTFB201402FC-V1-R250 is used in many RF applications such as amplifiers, mixers, modems, and oscillators, due to its low on-state resistance and high RF isolation. It is also used in power amplifiers and in balanced amplifiers, because of its low drain-source capacitance.The PTFB201402FC-V1-R250 is designed to have a wide range of operating frequencies, from 10 kHz to 10 GHz. It also has a low figure of merit and low gate input capacitance, making it suitable for use in high frequency switching. Its low on-state resistance and high RF isolation makes it ideal for high power RF applications.In addition, the PTFB201402FC-V1-R250 has a low input capacitance, allowing it to be used at higher frequencies without compromising performance. It is also highly reliable, with high junction temperature and voltage ratings.In conclusion, the PTFB201402FC-V1-R250 is a highly versatile N-channel MOSFET with excellent RF performance. Its low on-state resistance, low gate charge, low switching times, and low drain-source capacitance make it suitable for a wide range of RF applications. Its high RF isolation, wide operating frequency range, low figure of merit, and low input capacitance make it an ideal choice for many high power RF applications.

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