SFT14GHR0G Allicdata Electronics
Allicdata Part #:

SFT14GHR0G-ND

Manufacturer Part#:

SFT14GHR0G

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 200V 1A TS-1
More Detail: Diode Standard 200V 1A Through Hole TS-1
DataSheet: SFT14GHR0G datasheetSFT14GHR0G Datasheet/PDF
Quantity: 1000
10000 +: $ 0.04265
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Introduction to SFT14GHR0G

The SFT14GHR0G is a general purpose ruggedized rectifier diode. It is well known throughout the industry for its superior ruggedness, reliability, and efficiency. This device has a wide range of applications and is available in both through-hole and surface mount packages.

Application Fields

The SFT14GHR0G is suitable for use in a variety of industries, including automotive, consumer electronics, telecom, telecom power, and industrial control applications. It is well-suited for applications that require reverse voltages up to 14V and peak forward currents up to 7A. It delivers superior ruggedness and current performance in these types of applications, making it an ideal choice for these applications.This diode is especially well-suited for automotive use, as it has excellent reverse voltage and surge current capabilities that allow it to withstand harsh environments. It can provide protection from high voltage and overcurrent conditions, and can be used to isolate two separate electrical circuits from each other. Additionally, it can be used to reduce the power dissipation of power switching circuits, which helps to improve efficiency, reduce losses, and reduce the overall cost.

Working Principle

The working principle of the SFT14GHR0G is based on its construction as a ruggedized rectifier diode. It is essentially a semiconductor device that is built with a pn-junction along with a thin layer of metal. The bottom layer acts as an emitter, while the top layer acts as a collector. When the device is forward biased, current will flow through the pn-junction in the same direction.When the device is reverse biased, no current will flow between the two layers. This is what makes the SFT14GHR0G a ruggedized diode, as it has the ability to withstand high voltage and current surges caused by external events or faulty circuits. In addition, this device is designed to reduce temperature rise during operation, as well as reduce the power dissipation of power switching applications. This makes it a great option for power supply designs that require high efficiency and reliability.

Conclusion

The SFT14GHR0G diode is a well-known and reliable device that has a wide range of applications. It has excellent reverse voltage and surge current capabilities, making it well-suited for harsh environment applications such as automotive and telecom power. Additionally, it can be used to reduce the power dissipation of power switching applications, helping to improve efficiency, reduce losses, and reduce the overall cost. Its ruggedness, reliability, and efficient performance make it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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