SFT1423-S-TL-E

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	--
Technology:	--
Current - Continuous Drain (Id) @ 25°C:	--
Rds On (Max) @ Id, Vgs:	--
Vgs(th) (Max) @ Id:	--
FET Feature:	--
Power Dissipation (Max):	--
Operating Temperature:	--
Mounting Type:	Surface Mount
Supplier Device Package:	TP-FA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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SFT1423-S-TL-E Application Field and Working Principle

Introduction

SFT1423-S-TL-E is a type of field-effect transistor (FET) which is also referred to as a metal-oxide-semiconductor field-effect transistor (MOSFET). This type of transistor enables the design of circuitry to obtain numerous advantages such as low power consumption and high switching speed. Additionally, MOSFETs are smaller in size as compared to other transistors. Amongst the available types of MOSFETs, the SFT1423-S-TL-E stands out due to its ideal characteristics for applications that require a higher-voltage operation, such as high voltage power conditioning. In this report, the application field and working principle of the SFT1423-S-TL-E will be discussed in detail.

Application Field

The SFT1423-S-TL-E is an insulated-gate field-effect transistor (IGFET) which offers a variety of benefits for Power management, automotive, and industrial applications. For instance, it can be used for power applications that require a higher voltage of operation up to 600V, such as off-line high-voltage power conditioners. In addition to that, the device is suitable for applications in the automotive sector, like Motor Control, Brushless DC Motor applications, Electronic Throttle Control, and On-board charger. The SFT1423-S-TL-E also provides extended performance, high reliability, and a broad range of packages, which makes them ideal for use in a wide range of industrial applications.

Working Principle

The SFT1423-S-TL-E is a type of MOSFET that is composed of four layers: a channel layer, two gate insulator layers and two anode layers. The two anode layers form an electric field that surrounds the channel layer, which is separated by the two gate insulator layers. When the electric field surrounding the channel layer is changed, this affects the flow of electrons through the channel. Depending on the kind of voltage applied to the gate insulator layers, the field-effect transistor can be operated as a P-channel or an N-channel device. In the case of an N-channel device, the gate voltage must be less than the voltage of the source and drain (S/D) terminals of the N-channel FET for it to be operated as an “on” device. This voltage is known as the threshold voltage (Vth). At Vth, the resistance between the S/D terminals of the N-channel FET is at its lowest, allowing maximum current to flow through the device. For a P-channel device, the gate voltage must be greater than the S/D terminals’ voltage for the P-channel FET to operate. At the threshold voltage, the resistance between the S/D terminals of the P-channel FET is at its lowest, allowing maximum current to flow through the device.

Conclusion

The SFT1423-S-TL-E is an insulated-gate field-effect transistor (IGFET) which is suitable for various applications such as power management, automotive, and industrial applications. It is capable of providing high-voltage operation up to 600V and is also characterized by extended performance, high reliability, and a broad range of packages. The working principle of the SFT1423-S-TL-E is based on an electric field surrounding the channel layer of the device that affects the flow of electrons. Depending on the kind of voltage applied, the FET can be operated as an N-channel or P-channel device.

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