Allicdata Part #: | SFT1458-TL-H-ND |
Manufacturer Part#: |
SFT1458-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 1A DPAK |
More Detail: | N-Channel 600V 1A (Ta) 1W (Ta), 38W (Tc) Surface M... |
DataSheet: | SFT1458-TL-H Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK/TP-FA |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta), 38W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 65pF @ 20V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 3.8nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 13 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SFT1458-TL-H is a type of single transistor field effect (FET) device known as an insulated gate field effect transistor (IGFET). It is an electrode that can control the flow of current through an electronic device by varying the electrical energy on the gate electrode. It is used in a variety of electronic applications and is an important component of switch-mode power supplies and logic circuits.
The SFT1458-TL-H is a N-channel enhancement-mode MOSFET with a source-drain breakdown voltage of 14 volts and a drain-source current rating of 8.5 amps. It is rated for a maximum junction temperature of +150°C and a maximum storage temperature of -55°C to +150°C. The gate threshold voltage is -2V and the drain to source on-resistance at -25°C is 2.3Ω. This device is usually found in a TO-263AA surface mount package.
As a three-terminal device, IGFETs consist of three components: gate, drain, and source. The gate is an insulated gate electrode that is used to control current through the FET. It is usually positive in charge and has a capacitance that gets charged for each unit of current passing through the FET. The drain is the output terminal and the source is the input terminal. These two terminals need to be connected to the source and drain supply source, respectively. The gate, in turn, is isolated from the source and drain and acts as a capacitive element, which is used to attenuate and control the current.
The working principle of the SFT1458-TL-H relies on the ability of the device to modulate the current controlled by the gate electrode. When the gate voltage is applied, the current passes through the semiconductor device. This leads to an increase in the drain-source voltage which ultimately leads to a reduction in current. When the gate voltage is taken away, the device switches back to high-impedance mode and the current stops flowing.
The SFT1458-TL-H is used in a variety of electronic applications including switch-mode power supplies and logic circuits, as well as field-emission displays, audio/video electronics, automotive and communications devices. It is also used as a voltage regulator and provides a highly efficient source of power. In addition, it is used in the control of LED lighting, motor control, and industrial control systems.
The SFT1458-TL-H is a very useful and versatile device in the field of modern electronics. Its ability to modulate the electrical current through a controlled gate voltage makes it the ideal choice for a wide array of applications. Its reliability, low-on resistance, and maximum junction temperature rating make it a reliable and cost-effective option for any of today\'s electronics projects.
The specific data is subject to PDF, and the above content is for reference
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