SFT1458-TL-H Allicdata Electronics
Allicdata Part #:

SFT1458-TL-H-ND

Manufacturer Part#:

SFT1458-TL-H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 1A DPAK
More Detail: N-Channel 600V 1A (Ta) 1W (Ta), 38W (Tc) Surface M...
DataSheet: SFT1458-TL-H datasheetSFT1458-TL-H Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK/TP-FA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1W (Ta), 38W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 20V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 13 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SFT1458-TL-H is a type of single transistor field effect (FET) device known as an insulated gate field effect transistor (IGFET). It is an electrode that can control the flow of current through an electronic device by varying the electrical energy on the gate electrode. It is used in a variety of electronic applications and is an important component of switch-mode power supplies and logic circuits.

The SFT1458-TL-H is a N-channel enhancement-mode MOSFET with a source-drain breakdown voltage of 14 volts and a drain-source current rating of 8.5 amps. It is rated for a maximum junction temperature of +150°C and a maximum storage temperature of -55°C to +150°C. The gate threshold voltage is -2V and the drain to source on-resistance at -25°C is 2.3Ω. This device is usually found in a TO-263AA surface mount package.

As a three-terminal device, IGFETs consist of three components: gate, drain, and source. The gate is an insulated gate electrode that is used to control current through the FET. It is usually positive in charge and has a capacitance that gets charged for each unit of current passing through the FET. The drain is the output terminal and the source is the input terminal. These two terminals need to be connected to the source and drain supply source, respectively. The gate, in turn, is isolated from the source and drain and acts as a capacitive element, which is used to attenuate and control the current.

The working principle of the SFT1458-TL-H relies on the ability of the device to modulate the current controlled by the gate electrode. When the gate voltage is applied, the current passes through the semiconductor device. This leads to an increase in the drain-source voltage which ultimately leads to a reduction in current. When the gate voltage is taken away, the device switches back to high-impedance mode and the current stops flowing.

The SFT1458-TL-H is used in a variety of electronic applications including switch-mode power supplies and logic circuits, as well as field-emission displays, audio/video electronics, automotive and communications devices. It is also used as a voltage regulator and provides a highly efficient source of power. In addition, it is used in the control of LED lighting, motor control, and industrial control systems.

The SFT1458-TL-H is a very useful and versatile device in the field of modern electronics. Its ability to modulate the electrical current through a controlled gate voltage makes it the ideal choice for a wide array of applications. Its reliability, low-on resistance, and maximum junction temperature rating make it a reliable and cost-effective option for any of today\'s electronics projects.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SFT1" Included word is 40
Part Number Manufacturer Price Quantity Description
SFT1423-S-TL-E ON Semicondu... -- 1000 MOSFET N-CH 500V 2A TP-FA...
SFT1443-TL-H ON Semicondu... 0.0 $ 1000 MOSFET N-CH 100V 9A TP-FA...
SFT1443-W ON Semicondu... 0.0 $ 1000 MOSFET N-CH 100V 9A IPAKN...
SFT1452-W ON Semicondu... 0.0 $ 1000 MOSFET N-CH 250V 3A IPAKN...
SFT1458-H ON Semicondu... 0.0 $ 1000 MOSFET N-CH 600V 1A IPAKN...
SFT1458-TL-H ON Semicondu... -- 1000 MOSFET N-CH 600V 1A DPAKN...
SFT1446-H ON Semicondu... 0.0 $ 1000 MOSFET N-CH 60V 20A TPN-C...
SFT1450-TL-H ON Semicondu... 0.0 $ 1000 MOSFET N-CH 40V 21A TP-FA...
SFT1341-W ON Semicondu... 0.0 $ 1000 MOSFET P-CH 40V 10A TPP-C...
SFT1345-H ON Semicondu... 0.0 $ 1000 MOSFET P-CH 100V 11A TPP-...
SFT1350-H ON Semicondu... 0.0 $ 1000 MOSFET P-CH 40V 19A TPP-C...
SFT1423-E ON Semicondu... 0.0 $ 1000 MOSFET N-CH 500V 2A TPN-C...
SFT1431-E ON Semicondu... 0.0 $ 1000 MOSFET N-CH 35V 11A TPN-C...
SFT1443-H ON Semicondu... 0.0 $ 1000 MOSFET N-CH 100V 9A TPN-C...
SFT1445-H ON Semicondu... 0.0 $ 1000 MOSFET N-CH 100V 17A TPN-...
SFT1450-H ON Semicondu... 0.0 $ 1000 MOSFET N-CH 40V 21A TPN-C...
SFT1341-TL-W ON Semicondu... 0.0 $ 1000 MOSFET P-CH 40V 10A TP-FA...
SFT1423-TL-E ON Semicondu... -- 1000 MOSFET N-CH 500V 2A TP-FA...
SFT1431-TL-E ON Semicondu... 0.0 $ 1000 MOSFET N-CH 35V 11A TP-FA...
SFT1440-E ON Semicondu... 0.0 $ 12300 MOSFET N-CH 600V 1.5A TPN...
SFT1440-TL-E ON Semicondu... 0.0 $ 1000 MOSFET N-CH 600V 1.5A TP-...
SFT1431-TL-W ON Semicondu... 0.0 $ 1000 MOSFET N-CH 35V 11A TP-FA...
SFT1350-TL-H ON Semicondu... 0.0 $ 1000 MOSFET P-CH 40V 19A TP-FA...
SFT1341-C-TL-E ON Semicondu... -- 1000 MOSFET P-CHP-Channel 40V ...
SFT1341-E ON Semicondu... 0.0 $ 1000 MOSFET P-CHP-Channel 40V ...
SFT1341-TL-E ON Semicondu... 0.0 $ 1000 MOSFET P-CHP-Channel 40V ...
SFT1342-TL-E ON Semicondu... 0.0 $ 1000 MOSFET P-CHP-Channel 60V ...
SFT1452-H ON Semicondu... 0.0 $ 1000 MOSFET P-CHN-Channel 250V...
SFT1452-TL-H ON Semicondu... 0.0 $ 1000 MOSFET P-CHN-Channel 250V...
SFT1342-E ON Semicondu... -- 1000 MOSFET P-CH 60V 12A IPAK/...
SFT11G R0G Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 50V 1A TS-...
SFT12G R0G Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 100V 1A TS...
SFT13G R0G Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 150V 1A TS...
SFT14G R0G Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 200V 1A TS...
SFT15G R0G Taiwan Semic... 0.05 $ 1000 DIODE GEN PURP 300V 1A TS...
SFT16G R0G Taiwan Semic... 0.05 $ 1000 DIODE GEN PURP 400V 1A TS...
SFT11GHR0G Taiwan Semic... 0.05 $ 1000 DIODE GEN PURP 50V 1A TS-...
SFT12GHR0G Taiwan Semic... 0.05 $ 1000 DIODE GEN PURP 100V 1A TS...
SFT13GHR0G Taiwan Semic... 0.05 $ 1000 DIODE GEN PURP 150V 1A TS...
SFT14GHR0G Taiwan Semic... 0.05 $ 1000 DIODE GEN PURP 200V 1A TS...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics