SI1002R-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI1002R-T1-GE3-ND

Manufacturer Part#:

SI1002R-T1-GE3

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 610MA SC75A
More Detail: N-Channel 30V 610mA (Ta) 220mW (Ta) Surface Mount ...
DataSheet: SI1002R-T1-GE3 datasheetSI1002R-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.06000
10 +: $ 0.05820
100 +: $ 0.05700
1000 +: $ 0.05580
10000 +: $ 0.05400
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: SC-75A
Supplier Device Package: SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 220mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 15V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 8V
Series: --
Rds On (Max) @ Id, Vgs: 560 mOhm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI1002R-T1-GE3 (hereafter, SI1002) is a surface-mounted, insulated-gate field-effect transistor (IGFET) manufactured by Vishay Siliconix. This series of IGFET features a single, insulated-gate, depletion-mode MOSFET operating at a maximum drain voltage of 100V and maximum drain current of 1A. The on-resistance of the device is as low as 0.64 Ω, making it ideal for applications such as power management and signal conversion. The SI1002\'s power saving design and low on-resistance give it a distinct advantage over other transistors, making it an ideal choice for a variety of applications.

The SI1002 is part of the Vishay Siliconix family of IGBTs, which feature a low on-resistance and wide voltage range for efficient power management and conversion. The non-polar nature of the insulated gate allows for fast switching and reliable control of the drain current, ensuring that it will operate optimally even in high-temperature environments. In addition, the SI1002 is designed to withstand up to 200V of drain-source voltage, making it suitable for a range of high-power applications. As such, it is well suited for use in automotive, industrial, telecommunication, and medical applications.

The SI1002 operates on the principle of a field-effect transistor, or FET. This type of transistor functions by using an electrostatic field to control the number of electrons that exist in a semiconductor channel between two source electrodes. When a voltage is applied across the gate and the channel, a small electric field is created which causes a change in the number of electrons present in the channel. This field can be used to either increase or decrease the number of charge carriers, allowing for the transistor to be used as an amplifier or a switch.

The operating region of the SI1002 is divided into three zones: cut-off, saturation, and linear. In the cut-off region, the drain-source voltage is less than the gate-source voltage, and the transistor operates as an open switch. In the saturation region, the drain-source voltage is higher than the gate-source voltage, and the transistor operates as a closed switch. And finally, in the linear region, the drain-source voltage is between the gate-source voltage, and the transistor acts as an amplifier.

The SI1002 has several key features that make it an attractive option for a variety of applications. It has a high maximum drain current of up to 1A, allowing it to operate in high-power applications. It also has a low on-resistance as low as 0.64Ω, providing efficient power management and low losses. In addition, the device\'s low thermal resistance ensures a low maximum junction temperature, making it ideal for use in high temperature environments. And finally, its small size – just 5.6 mm x 7.5mm – makes it an ideal choice for applications where space is limited.

The SI1002 is designed for use in a wide range of applications in the industrial, automotive, telecommunication, and medical industries. Its high drain current and low on-resistance make it suitable for use in power management and signal conversion circuits such as DC-DC converters and motor control systems. The low thermal resistance ensures reliable operation in high temperature environments, making it well suited for use in automotive applications such as car accessories. And finally, its small size make it an ideal choice for applications where space is limited, such as medical equipment.

In conclusion, the SI1002 is a surface-mounted, insulated-gate field-effect transistor (IGFET) manufactured by Vishay Siliconix. It is part of the Vishay Siliconix family of IGBTs and features a single, insulated-gate, depletion-mode MOSFET operating at a maximum drain voltage of 100V and maximum drain current of 1A. The device\'s low on-resistance of 0.64 Ω and power-saving design make it well suited for use in a wide range of applications, including power management and signal conversion, motor control systems, and car accessories. In combination with its small size, these features make the SI1002 an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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