SI1031X-T1-E3 Allicdata Electronics
Allicdata Part #:

SI1031X-T1-E3-ND

Manufacturer Part#:

SI1031X-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 20V 0.155A SC-75A
More Detail: P-Channel 20V 155mA (Ta) 300mW (Ta) Surface Mount ...
DataSheet: SI1031X-T1-E3 datasheetSI1031X-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Package / Case: SC-75A
Supplier Device Package: SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300mW (Ta)
FET Feature: --
Vgs (Max): ±6V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 155mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI1031X-T1-E3 is a field-effect transistor (FET) and one of the members of the SI1031X series. This device is designed to provide high-performance switching capabilities while being easy to use and cost-effective. It is available in a wide range of packages including SOT-223, SOIC-3, TSSOP, and TO-220. The SI1031X-T1-E3 is a single FET that has a VDSS rating of 30V and can handle up to 1A of continuous current.

The SI1031X-T1-E3 is commonly used in switching applications. Examples of such applications are motor control, digital logic, and power distribution. The device is ideal for high-frequency switching and can be used in high-current applications such as in power distribution systems. Other applications in which the SI1031X-T1-E3 can be used include switching regulators, level shifting, and signal generation.

The SI1031X-T1-E3 is designed to operate with a low voltage and low gate power. It can be operated with a gate voltage as low as 2V and a single-ended input power as low as 150mW. It also has a low on-state resistance that enables it to switch faster than other FETs in the same package.

The working principle of the SI1031X-T1-E3 is based on the generation and control of a channel between the source and drain region by applying a gate voltage. When a gate voltage (VGS) is applied to the device, a depletion region is formed between the source and drain region, forming a conductive channel. When the gate voltage is increased, the channel is widened and the device is turned on.

The SI1031X-T1-E3 is a low-cost, robust, and reliable device that is suitable for a wide range of applications. It is capable of handling up to 1A of current and is targetted towards high-performance switching applications. The device is simple to use and can be operated with a low gate voltage, making it an ideal choice for cost-sensitive applications.

The specific data is subject to PDF, and the above content is for reference

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