
Allicdata Part #: | SI1051X-T1-GE3TR-ND |
Manufacturer Part#: |
SI1051X-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 8V 1.2A SC89-6 |
More Detail: | P-Channel 8V 236mW (Ta) Surface Mount SC-89-6 |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SC-89-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 236mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 560pF @ 4V |
Vgs (Max): | ±5V |
Gate Charge (Qg) (Max) @ Vgs: | 9.45nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 122 mOhm @ 1.2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 8V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI1051X-T1-GE3 is a common-drain transistor and multifunction device developed by STMicroelectronics. It is a discrete switch, transistor driver and current regulator, making it a useful solution in many applications. In this article we will discuss the application fields and working principle of the SI1051X-T1-GE3.
The Si1051X-T1-GE3 is a high-performance solution for general-purpose industrial and consumer applications. It features an excellent temperature coefficient and low power consumption. Its operating temperature range makes it suitable for applications that require high temperature environment. Furthermore, it has high rate of current control and fast switching times, making it a great choice for applications that need precision and quick turn-on and turn-off times.
The SI1051X-T1-GE3 is a single-channel transistor. It is built with a combination of a MOSFET and a bipolar transistor to provide low power consumption and fast switching times. The MOSFET element provides the drive on/off switching, while the bipolar transistor element provides a current sink and reduces the voltage drop across the MOSFET. This combination provides a simple, low-power solution.
The SI1051X-T1-GE3 is mainly used in industrial and consumer applications such as motor control, automation, power generation and electrical equipment. It can also be used for applications that require time-sensitive switching, such as temperature control, navigation systems, and medical instruments. Moreover, it can be used as a driver in power supplies, electronic devices, and communication systems.
The SI1051X-T1-GE3 is based on the principle of “pulsed on/off” control. It works by using an input signal to drive a gate voltage which switches the transistor on and off. When the gate voltage is low, the device is off, and when the gate voltage is high, the device is on. This operating principle allows for precise control of the current and precise switching times without any heat dissipation.
The SI1051X-T1-GE3 also has several other features, such as an adjustable current limit, a soft start function, low power consumption, and a low standby power. The adjustable current limit ensures that the device does not draw excessive current from the supply. The soft start function reduces power consumption and noise. The low power consumption ensures that the device does not draw more current than necessary and keeps energy consumption to a minimum. The low standby power ensures that the device does not draw current during inactive times.
In conclusion, the SI1051X-T1-GE3 is an ideal choice for a wide range of industrial, consumer, and medical applications due to its low power consumption, precise switching, and adjustable current limit. Its combination of an MOSFET and a bipolar transistor also ensures reliable operation even in harsh environmental conditions. This makes the SI1051X-T1-GE3 an attractive option for a wide range of applications.
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