SI1051X-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI1051X-T1-GE3TR-ND

Manufacturer Part#:

SI1051X-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 8V 1.2A SC89-6
More Detail: P-Channel 8V 236mW (Ta) Surface Mount SC-89-6
DataSheet: SI1051X-T1-GE3 datasheetSI1051X-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 236mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 4V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 9.45nC @ 5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 122 mOhm @ 1.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: --
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI1051X-T1-GE3 is a common-drain transistor and multifunction device developed by STMicroelectronics. It is a discrete switch, transistor driver and current regulator, making it a useful solution in many applications. In this article we will discuss the application fields and working principle of the SI1051X-T1-GE3.

The Si1051X-T1-GE3 is a high-performance solution for general-purpose industrial and consumer applications. It features an excellent temperature coefficient and low power consumption. Its operating temperature range makes it suitable for applications that require high temperature environment. Furthermore, it has high rate of current control and fast switching times, making it a great choice for applications that need precision and quick turn-on and turn-off times.

The SI1051X-T1-GE3 is a single-channel transistor. It is built with a combination of a MOSFET and a bipolar transistor to provide low power consumption and fast switching times. The MOSFET element provides the drive on/off switching, while the bipolar transistor element provides a current sink and reduces the voltage drop across the MOSFET. This combination provides a simple, low-power solution.

The SI1051X-T1-GE3 is mainly used in industrial and consumer applications such as motor control, automation, power generation and electrical equipment. It can also be used for applications that require time-sensitive switching, such as temperature control, navigation systems, and medical instruments. Moreover, it can be used as a driver in power supplies, electronic devices, and communication systems.

The SI1051X-T1-GE3 is based on the principle of “pulsed on/off” control. It works by using an input signal to drive a gate voltage which switches the transistor on and off. When the gate voltage is low, the device is off, and when the gate voltage is high, the device is on. This operating principle allows for precise control of the current and precise switching times without any heat dissipation.

The SI1051X-T1-GE3 also has several other features, such as an adjustable current limit, a soft start function, low power consumption, and a low standby power. The adjustable current limit ensures that the device does not draw excessive current from the supply. The soft start function reduces power consumption and noise. The low power consumption ensures that the device does not draw more current than necessary and keeps energy consumption to a minimum. The low standby power ensures that the device does not draw current during inactive times.

In conclusion, the SI1051X-T1-GE3 is an ideal choice for a wide range of industrial, consumer, and medical applications due to its low power consumption, precise switching, and adjustable current limit. Its combination of an MOSFET and a bipolar transistor also ensures reliable operation even in harsh environmental conditions. This makes the SI1051X-T1-GE3 an attractive option for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SI10" Included word is 40
Part Number Manufacturer Price Quantity Description
SI1061-A-GM Silicon Labs 2.91 $ 60 IC RF TXRX+MCU ISM ...
SI1025-A-GM Silicon Labs 0.0 $ 1000 IC RF TXRX+MCU ISM ...
SI1079X-T1-GE3 Vishay Silic... 0.1 $ 1000 MOSFET P-CH 30V 1.44A SC8...
SI1073X-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 30V 0.98A SC8...
SI1014-A-GMR Silicon Labs 0.0 $ 1000 IC RF TXRX+MCU ISM ...
SI1002-C-GM Silicon Labs 0.0 $ 1000 IC RF TXRX+MCU ISM ...
SI1067X-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 1.06A SC8...
SI1013R-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 20V 350MA SC-...
SI1024-B-GM Silicon Labs 6.57 $ 1000 IC RF TXRX+MCU ISM ...
SI1010-A-GMR Silicon Labs 0.0 $ 1000 IC RF TXRX+MCU ISM ...
SI1015-A-GMR Silicon Labs 0.0 $ 1000 IC RF TXRX+MCU ISM ...
SI1033X-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET 2P-CH 20V 0.145A S...
SI1002-ESB2-GM Silicon Labs 0.0 $ 1000 IC RF TXRX+MCU ISM ...
SI1001-E-GM2R Silicon Labs 3.5 $ 1000 IC RF TXRX+MCU ISM ...
SI1037-A-GM Silicon Labs 0.0 $ 1000 IC RF TXRX+MCU ISM ...
SI1023-A-GMR Silicon Labs 0.0 $ 1000 IC RF TXRX+MCU ISM ...
SI1016X-T1-GE3 Vishay Silic... -- 1000 MOSFET N/P-CH 20V SC89-6M...
SI1065X-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 12V 1.18A SOT...
SI1081-A-GMR Silicon Labs 2.59 $ 1000 IC RF TXRX+MCU ISM ...
SI1035-A-GMR Silicon Labs 0.0 $ 1000 IC RF TXRX+MCU ISM ...
SI1050X-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 8V 1.34A SOT5...
SI1012R-T1-GE3 Vishay Silic... -- 27000 MOSFET N-CH 20V 500MA SC-...
SI1021-B-GM Silicon Labs 6.08 $ 1000 IC RF TXRX+MCU ISM ...
SI1025X-T1-GE3 Vishay Silic... -- 1000 MOSFET 2P-CH 60V 0.19A SC...
SI1033X-T1-GE3 Vishay Silic... 0.13 $ 1000 MOSFET 2P-CH 20V 0.145A S...
SI1037-B-GM3 Silicon Labs 3.79 $ 1000 IC RF TXRX+MCU ISM ...
SI1024-A-GMR Silicon Labs 0.0 $ 1000 IC RF TXRX+MCU ISM ...
SI1016X-T1-E3 Vishay Silic... -- 1000 MOSFET N/P-CH 20V SOT563F...
SI1024X-T1-E3 Vishay Silic... -- 1000 MOSFET 2N-CH 20V 0.485A S...
SI1000K3 Belden Inc. 96.23 $ 1000 SPLICE AUTO SEIZE
SI1031-A-GM Silicon Labs 0.0 $ 1000 IC RF TXRX+MCU ISM ...
SI1036-B-GM3R Silicon Labs 4.02 $ 1000 IC RF TXRX+MCU ISM ...
SI1025-A-GMR Silicon Labs 0.0 $ 1000 IC RF TXRX+MCU ISM ...
SI1083-A-GM Silicon Labs 2.54 $ 360 IC RF TXRX+MCU ISM ...
SI1023-B-GM3 Silicon Labs 4.07 $ 1000 IC RF TXRX+MCU ISM ...
SI1031-B-GM3R Silicon Labs 4.4 $ 1000 IC RF TXRX+MCU ISM ...
SI1036X-T1-GE3 Vishay Silic... 0.08 $ 1000 MOSFET 2 N-CH 30V 610MA S...
SI1037X-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 0.77A SC8...
SI1020-915-A-SDK Silicon Labs 0.0 $ 1000 KIT SOFTWARE DEV SI1020 9...
SI1020-B-GM Silicon Labs 6.77 $ 1000 IC RF TXRX+MCU ISM ...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics