| Allicdata Part #: | SI1062X-T1-GE3TR-ND |
| Manufacturer Part#: |
SI1062X-T1-GE3 |
| Price: | $ 0.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 20V SC-89 |
| More Detail: | N-Channel 20V 220mW (Ta) Surface Mount SC-89-3 |
| DataSheet: |  SI1062X-T1-GE3 Datasheet/PDF |
| Quantity: | 108000 |
| 1 +: | $ 0.06000 |
| 10 +: | $ 0.05820 |
| 100 +: | $ 0.05700 |
| 1000 +: | $ 0.05580 |
| 10000 +: | $ 0.05400 |
Specifications
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Package / Case: | SC-89, SOT-490 |
| Supplier Device Package: | SC-89-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 220mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 43pF @ 10V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.7nC @ 8V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 420 mOhm @ 500mA, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | -- |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SI1062X-T1-GE3 is a type of FET (Field Effect Transistor) used in power management applications. It is a single MOSFET (Metal Oxide Semiconductor FET) designed to handle currents up to 2A. This makes it suitable for use in DC-DC converters, relay drivers, and other general power management applications. The SI1062X-T1-GE3 features a wide drain voltage range (up to 40V), low on-resistance (7.4 to 10.4mOhms over temperature),and an N-channel structure. It utilizes a low gate-to-source voltage of -2V to -6V, allowing it to be controlled efficiently by standard logic level signals. This FET is designed to operate in temperatures ranging from -40°C to +105°C. It also has high-voltage ESD protection with a breakdown voltage of 16.5kV on the drain-source. This ensures high reliability in the face of surges and transients common in both commercial and industrial applications. The SI1062X-T1-GE3 has a unique two-layer gate structure which provides superior performance in terms of low gate capacitance and fast switching speeds. This makes it ideal for a wide range of pulse current applications such as motor drivers, audio amplifiers, and power switching circuits. The working principle of a MOSFET is based on the concept of a voltage-controlled current source. When a positive voltage is applied to the gate, it creates an electric field that attracts electrons from the source material and pours them into the channel. As a result, the conductivity of the channel increases, allowing current to flow between the source and drain terminals. The SI1062X-T1-GE3 provides enhanced reliability and optimized performance over a wide range of applications. This makes it a great choice for any power management design that requires superior temperature performance, low on-resistance, and high-voltage protection.
The specific data is subject to PDF, and the above content is for reference
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