Allicdata Part #: | SI3400A-TPMSTR-ND |
Manufacturer Part#: |
SI3400A-TP |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | N-CHANNEL,MOSFETS,SOT-23 PACKAGE |
More Detail: | N-Channel 30V 5.8A 400mW Surface Mount SOT-23 |
DataSheet: | SI3400A-TP Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.10161 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 5.8A |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Rds On (Max) @ Id, Vgs: | 32 mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 1.155nF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 400mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23 |
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The SI3400A-TP is a single component of a type of transistor known as a field effect transistor, more commonly known as a FET. This particular component is actually a type of FET known as a MOSFET, or Metal Oxide Semiconductor Field Effect Transistor. It is a special type of FET because instead of an arrangement of two metal contacts, it uses a metal gate, one contact must remain insulated with the metal oxide insulation.The SI3400A-TP is typically used in low power applications where its properties allow it to act as an effective switching or amplifier device. It has a particularly low on-state voltage which allows it to perform a variety of tasks to a higher standard than most transistor types.It also has a very high current ratings, in most cases as much as 500mA, making it ideal for applications such as power supply switching. It also has a low maximum gate to drain voltage, usually no more than 10V.The SI3400A-TP is particularly useful for applications where a low-power supply is available and can be used for switching or amplifying between power sources. It can be used in many different applications such as motor control, audio and radar systems, alarm systems and various other electronic circuits. Most of these circuits use p-type and n-type MOSFETs as well as a metal-oxide-semiconductor semiconductor (MOS) transistor.The working principle behind the SI3400A-TP is relatively simple. A small voltage is applied to the gate of the MOSFET, which allows current to flow through the semiconductor material between the drain and the source. This current flow is modulated based on the voltage applied to the gate. When a high voltage is applied to the gate, the transistor is turned on and current can flow. When a low voltage is applied to the gate, the transistor is turned off and current cannot flow. The pinout of the SI3400A-TP also plays an important role in its functioning. The gate pin is used to control the current flow between the source and the drain by providing the voltage necessary to turn the transistor on or off.The drain and source pins provide the current to and from the power supply for the device, respectively. The maximum current flowing between the drain and source is limited by the voltage applied to the gate pin. If a high voltage is applied, more current will flow and vice versa.Finally, the metal-oxide-semiconductor layer is important in the functionality of this type of transistor. The silicon layer provides an insulating barrier between the metal gate and the semiconductor portion of the MOSFET. This prevents current leakage between the metal gate and the semiconductor portion, and also allows a larger capacitance to form between the source and the drain.In conclusion, the SI3400A-TP is a single component of a type of field-effect transistor known as a MOSFET. It is used in low-power applications as an effective switching or amplifier device due to its low on-state voltage, high current ratings, low gate to drain voltage and its insulated metal gate. Its functionality is based on the voltage applied to the gate, and the metal-oxide-semiconductor layer allows for a larger capacitance to form between the source and the drain. Becuase of its versatility, the SI3400A-TP is a widely used component in a variety of electronics systems.
The specific data is subject to PDF, and the above content is for reference
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