SI3415A-TP Allicdata Electronics

SI3415A-TP Discrete Semiconductor Products

Allicdata Part #:

SI3415A-TPMSTR-ND

Manufacturer Part#:

SI3415A-TP

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: P-CHANNEL,MOSFETS,SOT-23 PACKAGE
More Detail: P-Channel 20V 4A 1.4W Surface Mount SOT-23
DataSheet: SI3415A-TP datasheetSI3415A-TP Datasheet/PDF
Quantity: 1000
3000 +: $ 0.10161
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Vgs(th) (Max) @ Id: 900mV @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.4W
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 45 mOhm @ 4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI3415A-TP is a dual N-channel advanced low gate charge MOSFET that is especially suited for high frequency switching applications. It features low on-resistance, low gate charge and fast switching speed. This makes it ideal for use in switching circuits such as power converters and digital logic ICs. It is also suitable for use in audio amplifiers, power and voltage regulators and other analog/mixed signal applications.

The SI3415A-TP is a type of Field-Effect Transistor (FET) known as Metal-Oxide-Semiconductor-Field-Effect Transistor (MOSFET). It is a voltage-controlled device that allows for current to flow between its source and drain terminals. The amount of current flow is determined by the voltage applied to the gate terminal. As the voltage applied increases, the amount of current that flows between the source and drain terminals increases.

The SI3415A-TP has two N-channel MOSFETs in it, meaning that it is a single component. The low gate charge feature of this device makes it ideal for high frequency switching applications as it minimizes the amount of additional current draw through the gate terminal. This leads to improved switching speed and efficiency.

The working principle of the SI3415A-TP is based on the idea of threshold voltage. This is the voltage at which the channel of the MOSFET is created, allowing for current to flow between the source and drain. With the application of an appropriate voltage to the gate terminal, current flow between the source and drain can be increased or decreased, depending on the voltage applied. This is the basic operation of the SI3415A-TP.

In summary, the SI3415A-TP is a dual N-channel advanced low gate charge MOSFET that is well suited for high frequency switching applications due to its low on-resistance, low gate charge and fast switching speed. It uses the principle of threshold voltage to allow current to flow between its source and drain terminals. This makes it ideal for use in switching circuits, audio amplifiers, power and voltage regulators and other analog/mixed signal applications.

The specific data is subject to PDF, and the above content is for reference

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