SI3475DV-T1-GE3

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The SI3475DV-T1-GE3 is a single n-channel enhancement mode Field-Effect Transistor (FET) from the SiA34xx family. It integrates a high density vertical trench technology process to achieve very low power, low on-resistance, and fast switching performance. This latest generation of FETs is optimized for use in all high voltage, low voltage, and power management solutions. The device can be used in a variety of applications, from mobile phones, tablets, media players and laptops, to HDTVs and automotive applications.

The SI3475DV-T1-GE3 is designed to prevent gate oxide damages which could result in device failure. It features an integrated latch-off drain-source resistance (RDSon) of typically 28 mΩ at 10V VGS. This feature allows for higher current density and more efficient thermal management than standard FETs. It also features a fast switching time of less than 28ns, and low turn-on and turn-off delays of 1ns and 0.2μs respectively.

The SI3475DV-T1-GE3 has a variety of applications, such as high voltage avalanche breakdown protection, off-line power converters, and LDOs. It can also be used in voltage monitoring and current and voltage management solutions. The device is capable of supporting high drain-source drain-body voltages of up to 40V. Additionally, it features low input capacitance, high ESD protection, and internal electrostatic protection.

The working principle of the SI3475DV-T1-GE3 is based on the movement of electrons due to the gate voltage applied to a FET. When the gate voltage is positive, the gate-source voltage increases which in turn causes an increase in the positive charge on the gate. This in turn causes a high concentration of negative electrons near the surface of the source and drain. This is known as the inversion layer and it helps the electrons to flow more freely between the source and the drain even at relatively low source-drain voltages.

As the current flowing through the channel increases, the drain-to-source voltage drops, and is eventually balanced by the gate voltage. This phenomenon is known as the pinch-off which means that even at low drain-source voltages, the current flowing through the channel will remain the same. This is an important feature which is useful in controlling the current flowing through the channel.

The SI3475DV-T1-GE3 is an ideal solution for low voltage, power management, and avalanche breakdown protection applications. Thanks to its high density vertical trench technology process, the device achieves very low power and fast switching. Additionally, its integrated latch-off and fast switching time are highly beneficial for voltage monitoring and current and voltage management solutions.

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