SI3476DV-T1-GE3

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The SI3476DV-T1-GE3 is a single-package MOSFET that is designed for use in a variety of field-effect transistor (FET) applications, including switching and linear mode power supply design. With its low on-resistance and low gate charge, the SI3476DV-T1-GE3 provides excellent switching performance with low power consumption and low thermal resistance. The low on-resistance ensures minimal power dissipation and reduced heat generation, while the low gate charge ensures efficient circuit operation.

The SI3476DV-T1-GE3 is an N-channel enhancement-mode power MOSFET, which has been designed for use in low-voltage, low-current applications. It is capable of switching up to 200V and handling a maximum drain current of 5.2A. The device features a maximum on-state resistance of just 0.008Ω and a breakdown voltage of 200V. The device also features a fast switching time and has an ESD protection rating of up to 8KV.

The working principle of the SI3476DV-T1-GE3 is based on the fact that the gate-source voltage applied to the transistor is the main factor that controls the output current. When the gate-source voltage is high, the MOSFET operates in an enhancement mode, and the drain current increases when the gate-source voltage increases. Conversely, when the gate-source voltage is low, the MOSFET operates in a depletion mode, and the drain current decreases when the gate-source voltage decreases. The low gate charge of the device ensures that the gate-source voltage required to control the drain current is low, thus providing efficient switching performance with low power consumption and low thermal resistance.

The SI3476DV-T1-GE3 is particularly suited for use in switching, linear mode and synchronous rectification applications. It can be used in a variety of power supply designs such as power factor correction, DC to DC converters, adjustable voltage regulators, low voltage switching supplies and ripple-regulated power supplies. It is also ideal for use in switched-mode power supplies, motor control circuits and other high-frequency switching applications. The device is also well suited for use in automotive applications due to its low on-resistance and low gate charge.

The SI3476DV-T1-GE3 is a robust power MOSFET and is capable of handling high surge voltage, repetitive peaks and transients. The device is also able to withstand high ambient temperatures and is available in a wide range of packages to suit different usage requirements. The device has been designed to be used in situations requiring repeatable performance, low noise and high switching speed.

In conclusion, the SI3476DV-T1-GE3 is a single-package MOSFET designed for use in a variety of field-effect transistor applications, including switching and linear mode power supply design. With its low on-resistance and low gate charge, the SI3476DV-T1-GE3 provides excellent switching performance with low power consumption and low thermal resistance. The device is also well suited for use in automotive applications due to its robustness and is available in a wide range of packages to suit different usage requirements.

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