| Allicdata Part #: | SI3454CDV-T1-GE3-ND |
| Manufacturer Part#: |
SI3454CDV-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 30V 4.2A 6TSOP |
| More Detail: | N-Channel 30V 4.2A (Tc) 1.25W (Ta), 1.5W (Tc) Surf... |
| DataSheet: |  SI3454CDV-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package: | 6-TSOP |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.25W (Ta), 1.5W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 305pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 10.6nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 50 mOhm @ 3.8A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4.2A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The SI3454CDV-T1-GE3 is a high-speed, high-efficiency, monolithic N-channel enhancement mode vertical power MOSFET from Vishay Siliconix. It is specifically designed to help address the needs of the growing power electronics market with low on-state resistance, low gate charge and excellent ESD protection capabilities. In this article, I will analyze the application field and the working principle of this transistor.The SI3454CDV-T1-GE3 is well suited for applications such as switching mode power supplies, high frequency switching applications and DC/DC converters in automotive, industrial, and off-line applications. It is also suitable for battery-powered devices. Its low threshold voltage of 2 V enables it to switch at lower voltages, which can help provide higher efficiency over a wider range of applications. Its low gate charge of 20 nC allows for faster switching times, enabling higher power density and performance.The working principle of the SI3454CDV-T1-GE3 is based on its ability to control the flow of electrons from the source to the drain. The source is the point at which electrons enter the transistor, while the drain is where they leave. In between the source and drain, there is a gate electrode, which is a conductive material that can be used to control the flow of electrons. When the gate is activated, it induces charge carriers in the region between the source and the drain, which creates an electric field that allows electrons to flow through the transistor.This flowing of electrons can be used to create a varying voltage between the source and the drain. This voltage can be controlled via the gate by adjusting the electric field. When the gate voltage is increased, the electric field strength increases and more electrons will flow from the source to the drain. On the other hand, when the gate voltage is decreased, the electric field strength decreases and fewer electrons will be able to pass from the source to the drain. This is the essence of the “enhancement mode” in which the SI3454CDV-T1-GE3 operates.In summary, the SI3454CDV-T1-GE3 is a high-speed, high-efficiency transistor that is well suited for applications such as switching mode power supplies, high frequency switching applications and DC/DC converters. Its low threshold voltage and gate charge enable it to switch quickly and efficiently, while its operational principles make it an excellent choice for power electronic systems.
The specific data is subject to PDF, and the above content is for reference
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