SI3483DV-T1-GE3

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SI3483DV-T1-GE3 is a leading metal-oxide-semiconductor field-effect transistor (MOSFET) device. It is a single P-channel MOSFET housed in a RoHS-compliant, small surface-mount package. By combining high-voltage, low on-resistance, and low gate-charge capabilities, the SI3483DV-T1-GE3 offers great performance. The device features a design that is scalable and can provide significant space savings while allowing high current capability in a number of applications.

The SI3483DV-T1-GE3 can be used in a variety of applications including load switching and battery switching in consumer electronics, such as digital TVs, DVD players, camcorders, and cellular phones. Additionally, it can be used in industrial and medical applications such as motor controls, welding systems, medical device systems, power supply circuits, and digital displays. This MOSFET has a total gate charge, from both the source-side FET and the drain-side FET, of up to 5nC. This allows for a wide range of voltage and current choices for operation.

The SI3483DV-T1-GE3 has a maximum voltage rating of 40V, which is well above standard FET ratings. This allows the device to handle a wide range of applications requiring higher voltage levels, such as off-line power supplies or high efficiency motor control. The on-resistance Imax is 25 mO, a value that is extremely low for a P-channel FET. This allows for greater power density in applications where the FET must conduct high currents. Additionally, the reverse breakdown voltage is rated at –30V.

The SI3483DV-T1-GE3 works on a principle of a majority carrier device where the gate is reverse biased relative to the source and drain components. This means that when a voltage is applied to the gate, the resulting electric field creates a depletion region on the surface. This depletion region prevents current from flowing through the channel below it, thereby acting like a switch. The gate voltage is used to control the current that flows through the channel. A higher gate voltage leads to a greater on-resistance and vice versa. This makes the SI3483DV-T1-GE3 a great choice for applications that require switching at high frequencies, such as motor control, as the on-resistance does not have to increase drastically with increasing voltage. The device can also switch currents of up to 25A.

In summary, the SI3483DV-T1-GE3 is a high-voltage and low-impedance MOSFET that offers great performance in a range of devices and applications. Its scalability and small size make it a great choice for applications such as digital displays, motor controls, and power supplies. Its low on-resistance also allows it to conduct high current with excellent efficiency. As such, it is a great choice for switching applications of all kinds.

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