SI3443CDV-T1-GE3 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI3443CDV-T1-GE3 is a type of power MOSFET that is designed for use in both high-pressure and low-pressure applications.

A MOSFET (metal-oxide-semiconductor field-effect transistor) is an electronic semiconductor device used for controlling and switching electronic signals. It is similar to a regular BJT (bipolar junction transistor) or an FET (field-effect transistor), but it has an insulated gate, which allows the voltage on the gate to control the current flowing through the device.

MOSFETs are available in a wide variety of shapes and sizes, but the SI3443CDV-T1-GE3 is specifically a single-channel n-type transistor. This means that it has just one channel of operation, and it can be used for switching or for amplifying electronic signals. It is also capable of operating at very high frequencies, making it ideal for high-speed or high-precision applications.

The SI3443CDV-T1-GE3 is designed for applications that require high-voltage and high-current switching. It is constructed using mesa technology and features an insulated gate, allowing it to control the current flow while operating. The device also features active protection against electrostatic discharges, preventing damage and ensuring reliable operation.

The SI3443CDV-T1-GE3 has a maximum drain-source voltage rating of 500 volts, and it can handle currents up to a maximum of 8 amperes. The device is fabricated using DMOS (dual-metal oxide semiconductor) technology, and it has a maximum gate-source voltage of 20 volts. It also has a gate-drain capacitance of 85pF, a gate-source capacitance of 110pF, and a gate-drain resistance of 60 Ohms.

In terms of its working principle, the SI3443CDV-T1-GE3 works by utilizing the law of rectification. The device allows current to flow from the source to the drain when the gate voltage is greater than the source voltage. The current flow is then controlled by the amount of gate voltage applied to the device. This makes the device ideal for applications that require both fast switching and accurate control of current flow.

The SI3443CDV-T1-GE3 is an ideal choice for applications in which a high degree of accuracy is required. It is well-suited to systems that require fast switching and precise control, such as power supplies, motor control, and audio amplifiers. Additionally, the device is suitable for industrial automation, embedded systems, automotive systems, and telecommunications equipment.

In summary, the SI3443CDV-T1-GE3 is a single-channel power MOSFET. It is a type of transistor that utilizes the law of rectification to control current flow and its insulated gate allows for precise control. This makes the device well-suited for applications that require fast switching and high levels of accuracy. The device is also suitable for high-voltage and high-current applications such as power supplies, motor control, audio amplifiers, and industrial automation.

The specific data is subject to PDF, and the above content is for reference