SI3407DV-T1-E3

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The SI3407DV-T1-E3 is a single N-Channel PowerTrench MOSFET with excellent RDS(ON), low gate charge and an integrated Schottky diode. It is produced using Fairchild’s proprietary, high cell density, DMOS technology. This device is ideal for advanced, high current switched mode power supplies. It also has a low gate input capacitance and fast switching speeds. In addition, it provides protection against Electrostatic Discharge (ESD).

Application Field

The SI3407DV-T1-E3 is designed for use in a wide range of applications including motor control, power system management, and high-current, low-voltage power switching. It is suitable for use in Power Factor Correction (PFC) topologies, light-emitting diode (LED) lighting control, and automotive power-train control applications. Its low gate input capacitance and fast switching speeds make it an ideal choice for advanced switched mode power supplies.

Working Principle

The SI3407DV-T1-E3 is an N-channel MOSFET, which uses two metal oxide layers, the source and drain, to control the current flow. By applying a voltage to the gate, the field effect can be created between the source and drain layers. This creates a channel between them, allowing current to flow when the gate is properly charged. This channel can be switched on or off, allowing the user to control the current flow.

The integrated Schottky diode provides protection against reversed polarity, which is common in applications such as motor control and LED lighting where the voltage and current can fluctuate. In addition, the device also features a low gate input capacitance, which helps reduce power dissipation and increase system efficiency.

Finally, the device features integrated ESD protection, allowing it to withstand voltages up to 2.5kV. This provides protection against accidental contact with charged objects and contact in environments with high levels of static electricity.

Conclusion

The SI3407DV-T1-E3 is an ideal choice for advanced power switching and motor control applications. Its low gate input capacitance and fast switching speed make it an ideal choice for high current, low voltage power switching across a wide range of applications. In addition, the integrated Schottky diode and ESD protection ensure that the device is protected against reversed polarity and accidental contact.

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