SI3424DV-T1-E3

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Transistors - FETs, MOSFETs - Single

SI3424 DV-T1-E3 is an enhancement-mode vertical Channel Field Effect Transistor (V-FET) that belongs to SI3424 family. Its structure consists of a vertical DMOS (Double-Diffused MOSFET) and a low resistance ohmic substrate. SI3424 V-FETs are widely used in various fields and applications.

Application Fields

• DC−DC converter: The rising switching frequency, small size, low loss, and high efficiency make SI3424 devices ideal for high frequency switching power supplies.
• Relay Replacement Controllers: The device\'s low on resistance and low gate drive requirements make it an ideal choice for replacing relays in many applications.
• High−Speed Interfaces: SI3424 devices have been designed specifically for high data rate applications, such as USB products, networking, and fiberoptics.
• High−Side Switching: By using the Si3424, designers will have a true high side switchingSolid State Relay (SSR) with no need for a negative supply.
• Low-Side Switching: SI3424 devices are especially useful for low side N-channel MOSFET applications, requiring tighter tolerancing than standard FETs.

Working Principle

The SI3424 uses an enhancement-mode vertical MOSFET fabricated with advanced silicon-gate DMOS technology. This device is designed to handle highly inductive loads susceptible to volt-age spikes caused by the inductive kickback effect. It utilizes the N-channel vertical DMOSFET and an auxiliary low-resistance ohmic substrate, resulting in very low on-resistance and gate drive requirements. The device’s operation is normally “OFF” and it is turned “ON” by applying a LOW-level Gate threshold voltage. The device is controlled by a logic level input signal and requires a minimum Gate-Source voltage for it to come into its linear conduction region. When the gate-source voltage is VGS(th) or greater, the device starts to turn on. As its current begins to increase, the drain-source operating voltage VDS decreases.

The SI3424 is designed in a vertical multi-gate SO-8 package. The convenient small-outline integrated circuit provides an ideal power platform for a wide range of applications. The device provides excellent thermal performance while at the same time offering superior circuit protection due to its integrated ESD protection and to its rugged, robust design.

Conclusion

SI3424 DV-T1-E3 is a highly efficient and reliable vertical channel field effect transistor. It comes in a small SO-8 package and features low on-resistance and gate drive requirements, making it ideal for many applications. It is suitable for DC-DC converters, relay replacement controllers, high-speed interfaces, and high-side or low-side switching applications.

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