SI3445DV-T1-E3

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	6-TSOP
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2W (Ta)
FET Feature:	--
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	25nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	42 mOhm @ 5.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	--
Drain to Source Voltage (Vdss):	8V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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SI3445DV-T1-E3 Application Field and Working Principle

Introduction

The SI3445DV-T1-E3 is a single n-channel enhancement-mode power MOSFET. With the latest in advanced power technology these N-channel MOSFETs are very suitable for use in applications such as power management applications and power switching applications. The maximum Drain-Source Voltage of the SI3445DV-T1-E3 reaches up to 80V, making it capable of dealing with high-power applications.

Features

The SI3445DV-T1-E3’s main features include a Rds(on) of 2.75mΩ, an operating temperature range of -55°C to 150°C, a breakdown voltage of 80V with a continuous drain current of 67A. It utilizes the advanced process technology, making it highly reliable and featuring a high gate to source breakdown voltage. It also offers fast switching speeds and low drain-source inductive and junction capacitance.

Applications

With its high performance, the SI3445DV-T1-E3 is a great choice for many applications requiring low on-resistance, high speed and extremely low gate charge. Applications include industrial control, computer motherboards, electrical control systems, automated garage doors, motor control and robot control.

Working Principle

The SI3445DV-T1-E3 MOSFET is a Field-Effect Transistor (FET) with one main source and myriad (or many) drain electrodes. This FET has an insulated-gate electrode to control the polarization of the channel and regulate the flow of current between the source and the drain. This insulated gate electrode consists of a workable piece of negative material that has a negative (N) charge, and this negative charge is held in place by the negative charge of the surrounding material.The voltage between the drain and the source then initiates a channel of electrons that flow through and out at the drain. The flow of electrons is a type of current called the drain current and this is regulated by the control voltage from the gate. A higher voltage from the gate will increase the drain current, while a lower voltage from the gate will decrease the drain current. The SI3445DV-T1-E3 is a depletion-mode device, meaning that it requires a negative gate voltage in order for the drain current to flow. In other words, the gate voltage must be lower than the source voltage for the drain current to flow. When the gate voltage is higher than the source voltage, the drain current will not flow, and this turns the MOSFET off. When a negative voltage is applied to the gate, the electrons in the body layer that are near the region between the source and drain are depleted, leaving behind a channel of holes (negative charges). The application of this negative voltage lowers the potential barrier between the source and drain, allowing the electrons to flow more freely through the channel. In conclusion, the SI3445DV-T1-E3 is a n-channel Enhancement-Mode power MOSFET with a maximum Drain-Source Voltage of up to 80V, making it suitable for high power applications. It offers a wide range of applications including industrial control, computer motherboards and motor control. The operating principle of the SI3445DV-T1-E3 is based on the depletion-mode device, that requires a negative gate voltage in order for the drain current to flow.

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