SI3451DV-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The SI3451DV-T1-E3 is a VN-channel enhancement mode MOSFET transistor which provides very low RDS(ON) and superior Avalanche energy specifications. It is designed for high current applications, typically used in areas such as digital audio power amplifiers, power driver circuits, and motor control systems. The SI3451DV-T1-E3 offers excellent performance for use in very aggressive switching applications.

Application Field

The SI3451DV-T1-E3 is ideal for applications which require high reliability and very low on-resistance, as it is capable of handling a wide range current up to 80A and voltage up to 25V. It can be used in a variety of industrial and consumer products such as audio power amplifiers, power driver circuits, and motor control systems. In addition, the SI3451DV-T1-E3 can be used in switching power supply applications, such as high-speed synchronous rectifiers, and in power management systems, such as DC-DC converters. This device is also well suited for portable devices and other energy-sensitive applications that require superior performance.

Working Principle

The working principle of the SI3451DV-T1-E3 is based on the concept of voltage-controlled MOSFETs. When the voltage on the gate terminal is increased, the channel resistance of the transistor will decrease, which enables current to flow from the drain terminal to the source terminal. This type of transistor is ideal for applications that require low power consumption and high switching speed. The SI3451DV-T1-E3 also has high avalanche energy and very low RDS(ON), making it suitable for applications which require high efficiency and reliable switching.

The SI3451DV-T1-E3 also features an integrated ESD protection device, which prevents permanent damage to the device due to ESD and EMI events. This device has a very symmetric pinout, which ensures a simple layout process and reduces the possibility of shorts during manufacturing. The device also has very low gate charge characteristics, which allow for a very fast switching speed. The device is also highly integrated, which allows designers to save board space and reduce system costs.

In conclusion, the SI3451DV-T1-E3 is a single VN-channel enhancement mode MOSFET transistor which offers low on-resistance and high Avalanche energy. It is ideal for high current applications, such as digital audio power amplifiers, power driver circuits, and motor control systems, and is well suited for portable and energy sensitive applications. The device also features an integrated ESD protection device and has a symmetric pinout which reduces the possibility of shorts during manufacturing. The device also has very low gate charge characteristics, which allows for a very fast switching speed.

The specific data is subject to PDF, and the above content is for reference