SI3460BDV-T1-GE3

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The SI3460BDV-T1-GE3 is a single-channel N-Channel enhancement mode Field-Effect Transistor (FET). Its static drain-source breakdown voltage is greater than 6V, making it ideal for high-voltage switching applications. It provides fast switching speeds, low on-resistance, and less leakage current when used in applications such as power line switching, relays, and high-voltage power controllers. Its small size and wide operating temperature range make it suitable for direct-coupled power switching in applications such as embedded systems and automotive electronics.

Application Field

The SI3460BDV-T1-GE3 is designed for high-voltage power switching applications. It is suitable for electric vehicles and other applications that require switching power levels greater than 6V. It is also suitable for embedded systems and automotive electronics. It can also be used in industrial and consumer applications such as power line switching, relays, and high-voltage power controllers.

Working Principle

The SI3460BDV-T1-GE3 is an N-channel enhancement mode FET that operates in an enhancement-mode fashion. This means that when a small gate-source voltage (VGS) is applied, it inverts the input current and turns the device on, allowing current to flow from the drain to the source. When VGS falls below the threshold voltage, the device turns off and no longer permits current to flow.

The device is composed of a P-type substrate, an N-doped source region and an N-doped drain region. When a positive voltage is applied to the gate, an electric field is created that attracts electrons from the N-doped regions, creating a conductive channel between them. When the gate voltage is removed, the channel dissipates, deactivating the device. This behavior is known as enhancement mode FET operation.

The SI3460BDV-T1-GE3 FET can handle high-current, high-input voltage switching with excellent efficiency and fast switching speeds. It also has low on-resistance and low leakage current, which helps reduce losses in power switching applications. It is also compact in size and has a wide operating temperature range for added versatility.

Conclusion

The SI3460BDV-T1-GE3 is a single-channel N-Channel enhancement mode Field-Effect Transistor (FET) that offers fast switching speeds, low on-resistance, and less leakage current for high-voltage power switching applications. It has a high breakdown voltage that makes it suitable for electric vehicle and other applications that require switching power levels greater than 6V. Its small size and wide operating temperature range make it suitable for embedded systems and automotive applications. It is an ideal choice for power line switching, relays, and high-voltage power controllers.

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