SI3464DV-T1-GE3 Discrete Semiconductor Products

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The SI3464DV-T1-GE3 is a field-effect transistor (FET) that is usually used in high power switching and audio applications. It is a type of single-gate MOSFET, and it is equipped with an insulated gate that is used to control the voltage which passes through it. It is an important component in a variety of systems, including amplifiers and digital logic circuits. In this article, we will discuss the application fields and the working principle of the SI3464DV-T1-GE3 transistor.

Application Fields

The SI3464DV-T1-GE3 is a type of power MOSFET that can be used for a wide range of high power applications, such as motor control, high power switching, and audio applications. It is also suitable for motor control applications such as DC motor control, cooling fan control, and AC motor control. In addition, the SI3464DV-T1-GE3 is suitable for digital logic applications, such as logic gates, memory circuits, and digital logic ICs. This transistor can also be used in power conversion applications, such as DC-DC converters and AC-DC converters. It is well-suited for applications that require high switching speeds, low on-resistance, and high current carrying capability.

Working Principle

The SI3464DV-T1-GE3 is a type of insulated-gate FET. It consists of a semiconductor material with a gate that is insulated from the rest of the semiconductor material. The drain and the source are connected to the opposite sides of the semiconductor material, and the gate is insulated from the rest of the material. When a positive voltage is applied to the gate, a electric field is generated in the semiconductor material, which causes electrons to flow from the source to the drain. This creates a conduction path between the source and the drain, allowing current to flow. The amount of current that can flow is determined by the electric field generated by the gate voltage. Conversely, when a negative voltage is applied to the gate, a electric field is generated in the opposite direction, and electrons are forced to move from the drain to the source. This creates a reverse conduction path and prevents current from flowing, thereby turning off the transistor.

Conclusion

The SI3464DV-T1-GE3 is a type of single-gate MOSFET that is suitable for a variety of high power applications. It is capable of switching large amounts of current with low resistance and high speed. The transistor operates on the principle of controlling the electric field generated by the gate voltage, which in turn controls the amount of current that is allowed to flow.

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