Allicdata Part #: | SI3465DV-T1-GE3-ND |
Manufacturer Part#: |
SI3465DV-T1-GE3 |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 3A 6-TSOP |
More Detail: | P-Channel 20V 3A (Ta) 1.14W (Ta) Surface Mount 6-T... |
DataSheet: | SI3465DV-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.15758 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.14W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 5.5nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SI3465DV-T1-GE3 is a N-Channel MOSFET produced by Vishay Semiconductors. It has a breakdown voltage of 30 volts with a 0.076 Ohm on-state resistance. This makes the device suitable for applications operating at higher voltage and current levels. The device is typically used as a load switch, with its fast switching speed and superior RDS(ON) characteristics, making it suitable for signals that require high-speed transitions from high to low or vice versa.
Device Construction
The SI3465DV-T1-GE3 is housed in a small SO-8 surface-mount package and features a standard MOSFET design with a gate, drain, and source. A gate oxide layer is used, along with a thin silicon nitride layer to aid in electron conduction. The gate terminal is isolated from the source and drain by the gate oxide insulation layer, which provides excellent voltage breakdown characteristics.
Device Operation
The SI3465DV-T1-GE3 operates according to the MOSFET transistor model. When a voltage is applied to the gate, electrons begin to flow from the source to the drain. The amount of current that flows between the source and drain is determined by the voltage applied to the gate. As the voltage increases, the current increases. When the voltage is increased to the point where it exceeds the device\'s threshold voltage, a saturation of electrons occurs which causes the device to enter its “on” state.
Application Field
The SI3465DV-T1-GE3 is typically used in power switching applications. It is commonly used as a load switch in applications such as DC-DC converters and consumer electronics, where it is used to quickly turn a high current load on and off. It is also used in motor control applications where its fast switching speed makes it ideal for use in switching high current loads. In addition, the device is suitable for use in high voltage, high power circuits such as in AC inverter circuits, where its low on-state resistance makes it ideal for applications that require high current and fast switching.
Conclusion
In conclusion, the SI3465DV-T1-GE3 is a great device for use in load switching and motor control applications. Its fast switching speed and excellent voltage characteristics make it well suited for applications that require high current or fast switching. It is a small SO-8 package that is easy to integrate into most applications. Additionally, its low on-state resistance and high breakdown voltage makes it ideal for high voltage, high power circuits like AC inverters.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI3445ADV-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 8V 4.4A 6-TSO... |
SI3445DV-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 8V 6-TSOPP-Ch... |
SI3402-TP | Micro Commer... | 0.06 $ | 1000 | MOSFET N-CHANNEL 30V 4A S... |
SI3404-TP | Micro Commer... | 0.06 $ | 1000 | MOSFET N-CHANNEL 30V 5.8A... |
SI3434-TP | Micro Commer... | 0.06 $ | 1000 | MOSFET N-CHANNEL 30V 5A S... |
SI3493DDV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CHANNEL 20V 8A 6... |
SI3400A-TP | Micro Commer... | 0.11 $ | 3000 | N-CHANNEL,MOSFETS,SOT-23 ... |
SI3443DVTR | Infineon Tec... | -- | 1000 | MOSFET P-CH 20V 4.4A 6-TS... |
SI3442DV | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 20V 4.1A SSOT... |
SI3443DVTRPBF | Infineon Tec... | -- | 1000 | MOSFET P-CH 20V 4.4A 6-TS... |
SI3475DV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 0.95A 6-... |
SI3407DV-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 8A 6-TSOP... |
SI3410DV-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 8A 6-TSOP... |
SI3424BDV-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 8A 6TSOPN... |
SI3424DV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 5A 6-TSOP... |
SI3433BDV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 4.3A 6-TS... |
SI3434DV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 4.6A 6-TS... |
SI3441BDV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 2.45A 6-T... |
SI3445ADV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 8V 4.4A 6-TSO... |
SI3445DV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 8V 6-TSOPP-Ch... |
SI3446ADV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 6A 6-TSOP... |
SI3447BDV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 12V 4.5A 6-TS... |
SI3451DV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 2.8A 6-TS... |
SI3454ADV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 3.4A 6TSO... |
SI3454CDV-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 4.2A 6TSO... |
SI3454CDV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 4.2A 6TSO... |
SI3455ADV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 2.7A 6TSO... |
SI3456BDV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 4.5A 6-TS... |
SI3456CDV-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 7.7A 6TSO... |
SI3456CDV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 7.7A 6TSO... |
SI3457BDV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 3.7A 6-TS... |
SI3460DV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 5.1A 6TSO... |
SI3473DV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 12V 5.9A 6-TS... |
SI3481DV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 4A 6-TSOP... |
SI3483DV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 4.7A 6-TS... |
SI3493DV-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 5.3A 6-TS... |
SI3493DV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 5.3A 6-TS... |
SI3495DV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 5.3A 6-TS... |
SI3424DV-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 5A 6-TSOP... |
SI3433BDV-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 4.3A 6-TS... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...