SI4330DY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI4330DY-T1-E3TR-ND

Manufacturer Part#:

SI4330DY-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 30V 6.6A 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 6.6A 1.1W Surf...
DataSheet: SI4330DY-T1-E3 datasheetSI4330DY-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: SI4330
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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SI4330DY-T1-E3 application field and working principle

The SI4330DY-T1-E3 is a triple N-Channel ON Semiconductor 30V Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) that can be used for a wide range of applications, such as high-side and low-side switching, power conversion, and motor control. The component is well suited for switching applications where frequency of operation is important, such as motor speed control.

How MOSFETs work

MOSFETs are semiconductor devices that are typically used as switches, analog amplifiers, and voltage level-shifters. At the heart of the device is a conducting channel, typically of heavily doped n-type semiconductor material, which is controlled by a gate terminal. By varying the applied voltage, the width and depth of the conducting channel can be adjusted, and therefore the current flow through the device can be adjusted. This makes MOSFETs useful for high-frequency use and allows them to achieve much higher switching speeds than an ordinary switch or relay.

Features and Benefits of the SI4330DY-T1-E3

The SI4330DY-T1-E3 has a number of useful features and benefits that make it an ideal choice for a variety of applications. The component is rated for a 30V drain-source voltage, has a low on-state resistance of just 1mΩ and has a low gate charge of 4.8nC. The device is compatible with the SOT-223 package, making it easy to integrate into designs requiring small package size. It also features a low gate-source threshold voltage, low input capacitance, and fast switching times, making it well suited for high-frequency applications. Additionally, the device has a wide temperature range, making it suitable for use in harsh environments.

Applications of the SI4330DY-T1-E3

The SI4330DY-T1-E3 has a wide range of applications, including high-side and low-side switching, power conversion, motor control, and as load switches. Its low on-state resistance, low gate charge, and fast switching times make it perfect for high-frequency motor speed control applications, while its wide temperature range ensures reliable operation in harsh environments. Additionally, its low input capacitance makes it perfect for use in switching applications and its low gate-source threshold voltage makes it ideal for high-frequency analog applications. As such, the SI4330DY-T1-E3 is an ideal choice for many different applications.

Conclusion

The SI4330DY-T1-E3 is a versatile Metal-Oxide Semiconductor Field-Effect Transistor that can be used for a wide range of applications, including high-side and low-side switching, power conversion, motor control, and as load switches. The device has a low on-state resistance, low gate charge, and fast switching times, making it perfect for high-frequency applications. Additionally, its wide temperature range means it can operate reliably in harsh environments. As such, the SI4330DY-T1-E3 is an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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