Allicdata Part #: | SI4378DY-T1-E3TR-ND |
Manufacturer Part#: |
SI4378DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 19A 8-SOIC |
More Detail: | N-Channel 20V 19A (Ta) 1.6W (Ta) Surface Mount 8-S... |
DataSheet: | SI4378DY-T1-E3 Datasheet/PDF |
Quantity: | 17500 |
Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8500pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 2.7 mOhm @ 25A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI4378DY-T1-E3 is a N-channel enhancement-mode Field Effect Transistors (FETs) manufactured by Vishay Siliconix. It is part of Vhaishay\'s OptiMOS series which utilizes its exceptionally low on-resistance-per-unit-area and offers higher efficiency with low thermal resistance. The transistors come in a D-Pak (TO-252) surface mount package, with a tab for easy mounting on the printed circuit board.
The SI4378DY-T1-E3 is a single N-channel Enhacement-Mode Power MOSFET (MET). It is designed for load switching and power control applications with wide voltage range from 4.5V to 40V. The single N-channel MET offers good performance with low on-resistance-per-unit-area, as well as fast switching times resulting in low power loss. Its small size makes it ideal for space-constrained applications, such as consumer electronics, automotive, and telecommunication systems.
The SI4378DY-T1-E3 excels in low-voltage DC switching and power control applications. The transistor is especially well-suited for applications such as load switching, power supply, inverters, speed controllers, lamp dimmers, and industrial control. It is designed to be used in many high performance applications because of its lower on-resistance and faster switching least.
The working principle of the SI4378DY-T1-E3 follows the same as other Field-Effect Transistors (FETs). It is a voltage controlled device, meaning that when a voltage is applied to the gate, it will open and allow a current flow to pass through the drain and source. It is controlled by a gate electrode that has a negative voltage applied to it, which causes the transistors to switch ON. When the voltage is increased or decreased, the current flowing through the drain and source will also increase or decrease.
The comprehensive design of the SI4378DY-T1-E3 helps to attain maximum performance in high-performance applications such as DC load switching and power control. The low on-resistance-per-unit-area, fast switching time and small size of the device help it to reduce overall power loss and enhance system efficiency. The flexible and reliable performance of the transistor makes it a perfect choice for many applications including consumer electronics, automotive, and telecommunication systems.
The specific data is subject to PDF, and the above content is for reference
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