| Allicdata Part #: | SI4390DY-T1-GE3-ND |
| Manufacturer Part#: |
SI4390DY-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 30V 8.5A 8SOIC |
| More Detail: | N-Channel 30V 8.5A (Ta) 1.4W (Ta) Surface Mount 8-... |
| DataSheet: | SI4390DY-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.8V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.4W (Ta) |
| FET Feature: | -- |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 12.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8.5A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The SI4390DY-T1-GE3 is a single N-Channel Logic Level Mosfet manufactured by Vishay Semiconductor. It is designed to be used with low voltage control signals and has a low threshold of 1.8V. It features a low rDS(on) of 6.2Ω and a continuous drain current of 5A.
Application Field
The SI4390DY-T1-GE3 is typically used in small switching applications with low voltage signals due to its low threshold voltage and low rDS(on). It is often used in MOSFET transistor circuits, such as:
- Inverter circuits
- DC-DC converters
- Power Management
- Battery Management
- Motor Control
- Driver Circuits
- Switch Mode Power Supplies
It is also used to drive a variety of power applications, such as automotive accessories and components, robots, home appliances and consumer electronics.
Working Principle
The SI4390DY-T1-GE3 works on the principle of a traditional MOSFET transistor. It consists of an N type and P type channel connected together by thin insulation layers. There are three terminals: Gate, Source and Drain. The Gate terminal is used to control the source-to-drain current. When the voltage at the Gate terminal is low, the Source-to-Drain current is depressed, and the device acts as an open switch. When the voltage at the Gate terminal is high, it activates the N type channel, allowing current to flow through the Drain terminal. This can be used to control other circuits and devices, such as LED lighting or home appliances.
The low voltage drive capability of the SI4390DY-T1-GE3 makes it a useful device for powering small electronics. For example, by using two of these devices in series, it can be used to create a low drop-out voltage regulator circuit that can be connected to batteries with a voltage as low as 3V. This can be used to power other applications, such as cell phones, cameras or MP3 players.
The low on-resistance of the SI4390DY-T1-GE3 makes it ideal for data switching applications and for controlling the power delivery of other components, such as DC motors and distributors. In these applications, it is possible to control the output current, as well as the voltage, of the connected device by changing the voltage on the Gate terminal.
Overall, the SI4390DY-T1-GE3 is a versatile, low voltage, low on-resistance MOSFET with a wide range of applications. It is a valuable device for those looking to control their electronics without the need for expensive components and complex circuitry.
The specific data is subject to PDF, and the above content is for reference
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SI4390DY-T1-GE3 Datasheet/PDF