Allicdata Part #: | SI4362BDY-T1-E3-ND |
Manufacturer Part#: |
SI4362BDY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 29A 8-SOIC |
More Detail: | N-Channel 30V 29A (Tc) 3W (Ta), 6.6W (Tc) Surface ... |
DataSheet: | SI4362BDY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 6.6W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4800pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 115nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 4.6 mOhm @ 19.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SI4362BDY-T1-E3 is a type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET). A MOSFET is an active semiconductor device, and is often used in amplifying and switching applications. SI4362BDY-T1-E3 is a single, n-type, low voltage, low power MOSFET with small footprint, making it suitable for many general-purpose applications.
In its most basic form, a MOSFET comprises three terminals; the gate, the drain and the source. The gate terminal is controlled by the externally supplied gate voltage (VGS), and acts as the input stage. The drain serves as the output, and the source is the common reference point between the gate and the drain. The source is connected to ground and provides a return path for the current.
The behavior of a FET is mainly governed by capacitive effects. When a positive gate voltage is applied, the channel will build up a negative electron charge, i.e. an inversion layer. The inversion layer induces a very large electrostatic force which pushes the majority carriers (electrons) away from the substrate, forming a so-called depletion region or channel. This allows current to flow through the device, or in other words, the MOSFET acts like a switch.
SI4362BDY-T1-E3 is a low voltage, low power MOSFET, thus it is suitable for many general-purpose applications. For example, it can be used as a switch in power supplies, as it can handle both high and low voltage levels, and its low power consumption makes it an ideal choice for battery powered appliances. It can also be used in motor control applications as it offers low on-resistance, and its small package size makes it suitable for use in many consumer electronics applications.
SI4362BDY-T1-E3 is also useful in digital, analog and industrial control systems, as it can be used to provide logic level conversion and power management. It can also be used in the protection of various circuits; for example in over-voltage and over-current protection. It can also be used in analog circuits as an amplifier, as it offers low Qg, making it suitable for use in low-noise applications.
In conclusion, SI4362BDY-T1-E3 is a versatile, low voltage, low power MOSFET, suitable for many general-purpose applications such as power supplies, motor control, digital, analog and industrial control systems and circuit protection. Its small form factor and low on-resistance make it an ideal choice for many consumer electronics applications.
The specific data is subject to PDF, and the above content is for reference
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