SI4386DY-T1-E3

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The SI4386DY-T1-E3 is a single P-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from Vishay. It is a very powerful transistor designed for power switching applications. It is typically used as a switch in power electronics for both voltage and current control.

The SI4386DY-T1-E3 has an ultra low on-resistance of only 4.9mΩ, making it ideal for high-drain applications. Its high current rating of -6A and maximum RDS(on) of 4.9mΩ make it suitable power switches at voltages up to 350V. It also has a low gate threshold voltage of -2.5V, allowing it to be driven by a wide range of controller circuits.

In operation, the gate of the MOSFET acts as a control electrode. When a voltage is applied to the gate, a channel is formed between drain and source, allowing current to flow through the device. As the gate voltage increases, the resistance of the MOSFET decreases, allowing more current to flow through the device. When the gate voltage is removed, the channel is closed, cutting off current flow. This makes the MOSFET an ideal switch for controlling currents at high voltages.

The SI4386DY-T1-E3 has a wide range of uses, from motor control to switching DC-DC converters. It is also well suited power on/off switch applications, and can be used in circuits that need to be PCB mounted. It can also be used in logic level circuits, such as driving LEDs or servos.

In summary, the SI4386DY-T1-E3 is a powerful single P-Channel MOSFET which is ideal for controlling currents at high voltages. It has an ultra low on-resistance which makes it suitable for high-drain applications, and its low gate threshold voltage allows it to be driven by a wide range of controllers. In addition, it has a wide range of applications from motor control to switching DC-DC converters and can be used in both logic level circuits and PCB mounted applications.

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