Allicdata Part #: | SI4320DY-T1-E3-ND |
Manufacturer Part#: |
SI4320DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 17A 8-SOIC |
More Detail: | N-Channel 30V 17A (Ta) 1.6W (Ta) Surface Mount 8-S... |
DataSheet: | SI4320DY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6500pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4320DY-T1-E3 is a n-channel enhancement mode MOSFET developed for high voltage and high current applications. It has high switching speed, excellent thermal stability and ESD protection. The device also offers good conduction performance and highly reliable operation.
Application Field of SI4320DY-T1-E3
The SI4320DY-T1-E3 is well suited to various high voltage and high current applications such as DC-DC converters, high power amplifiers and power switching circuits. It can also be used for motor control, DC motor drives, and electric vehicle chargers.
The SI4320DY-T1-E3 has a wide range of on-state current capability, up to 70A for continuous flows and bursts of 200A for a few milliseconds. The device also offers fast switching speed, with a 10V/ns turn-on and a 70V/ns turn-off capability. The device also has excellent thermal stability, with a temperature range of -55°C to +175°C.
The SI4320DY-T1-E3 is designed with several ESD protection mechanisms and is capable of withstanding ESD strikes up to 4kV HBM. The device can also operate with a voltage range of -100V to +600V.
Working Principle of SI4320DY-T1-E3
The SI4320DY-T1-E3 utilizes a number of design features which help to reduce switching time and improve reliability. The features include an optimized gate oxide for synchronous switching, and an optimized channel for enhanced thermal management. The device also features a low threshold voltage, which enables the device to switch faster and more reliably.
The SI4320DY-T1-E3 has a built-in self-protection mechanism, which helps protect the device from overstress conditions such as over current and over voltage. The device also features a self-protection feature against electrostatic discharge (ESD). This feature helps to reduce damage to the device from ESD events.
The SI4320DY-T1-E3 achieves high power efficiency, thanks to its high current capability and efficient heat transfer. The device also has high frequency operation due to its low on-resistance, low input capacitance, and improved power losses.
Overall, the SI4320DY-T1-E3 is an excellent choice for applications that require high-speed switching and good thermal management. It is suitable for a wide range of AC/DC, DC/DC, and motor control applications due to its high voltage and current capabilities.
The specific data is subject to PDF, and the above content is for reference
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