Allicdata Part #: | SI4368DY-T1-E3TR-ND |
Manufacturer Part#: |
SI4368DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 17A 8-SOIC |
More Detail: | N-Channel 30V 17A (Ta) 1.6W (Ta) Surface Mount 8-S... |
DataSheet: | SI4368DY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8340pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI4368DY-T1-E3 is a single P-Channel 30 V (D-S) MOSFET. It is a special type of transistor, part of the wide range of family of FETs and MOSFETs. It is made from an advanced CODMOS process, featuring fast switching time, low on-resistance and low input capacitance. This makes it a perfect choice for use in a variety of applications.
SI4368DY-T1-E3 MOSFETs are an ideal solution for low-voltage, low-power applications such as dc/dc converters, crystal oscillators, voltage monitors, monostable/astable multivibrators, as well as automotive and industrial circuit designs. Thanks to its low on-resistance, it can also be used in audio amplifiers and communication systems. This device is also perfectly suited for portable and battery-powered applications, such as mobile phones and GPS receivers.
The SI4368DY-T1-E3 has a very low threshold voltage of 0.2 V max, making it suitable for low-voltage operations. It includes a built-in Zener diode to protect the MOSFET from damage due to ESD or transients. Its P-channel interior is specifically designed to reduce reverse current flow, resulting in improved efficiency and higher power gains.
The SI4368DY-T1-E3 operates according to the Field Effect principle. This is a form of transistor action which is at the heart of semiconductor devices. It works in a lot like a traditional vacuum tube amplifier, with a field generated between the gate and the source creating an electric field. This field controls the flow of electrons from the source to the drain, essentially controlling the current flow.
In order for the device to function properly, it must be biased correctly. This is done by connecting a voltage source to the gate terminal of the MOSFET. The voltage applied to the gate creates the electric field between it and the source. Once the gate voltage exceeds a certain threshold voltage, the current flow between the source and drain increases semi-proportionally.
The SI4368DY-T1-E3 can be used in a variety of applications because of the availability of different packages and its compatibility with many boards. Its low voltage drop and on-resistance make it well suited for low-power designs such as dc/dc converters and mobile phones. It is also ideal for high frequency switching applications such as MHz-level oscillators and fast switching logic devices. The device also provides excellent ESD protection capabilities and can be used as a power-on reset device to ensure proper system start-up.
The SI4368DY-T1-E3 is an incredibly versatile component that can be used in a variety of applications. Its low voltage operation and fast switching time makes it ideal for low-power designs while its built-in Zener diode provides excellent protection against ESD. The device is also perfectly suited for high frequency switching applications and is compatible with many boards. Thanks to its excellent performance and design flexibility, the SI4368DY-T1-E3 is a must-have component for any modern circuit design.
The specific data is subject to PDF, and the above content is for reference
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