Allicdata Part #: | SI4324DY-T1-E3-ND |
Manufacturer Part#: |
SI4324DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 36A 8-SOIC |
More Detail: | N-Channel 30V 36A (Tc) 3.5W (Ta), 7.8W (Tc) Surfac... |
DataSheet: | SI4324DY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.5W (Ta), 7.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3510pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 85nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4324DY-T1-E3 is a Field Effect Transistor (FET) used to enhance the speed, power and efficiency of electronic components. FETs are often referred to as Unipolar Transistors as they have one positively charged electrode (Source) and one negatively charged electrode (Drain). TDiscovered by John Bardeen, Walter H. Brattain and William B. Shockley in 1947, the FET is able to control the flow of electricity of an electronic component. It is important to note that the working principle of a FET is quite different from that of a bipolar transistor. While the bipolar transistor relies on reaching a certain current level to turn ON or OFF, the FET uses a gate voltage to control the ON/OFF state of the current flow.
The SI4324DY-T1-E3 is a single N-channel MOSFET. It is the epitome of a low-cost general-purpose FET. It has a low threshold voltage, high input impedance, fast switching speed and low conduction losses. It is designed for low-noise, high-speed analog switching applications as well as other low-power applications. It has a typical gate-source voltage of -4.5V and drain-source voltage of 500V.
A single MOSFET can be used in applications such as power controllers, motor controllers, switching circuits, and in pulsed power applications. It is particularly suited for power amplifiers, power switching circuits and for providing high-speed switching. It can also be used in a low-side switch configuration, used to provide low-current control in many electronic devices. Common applications include voltage regulators, power supplies, RF power amplifiers, motor controls and lighting controls.
The SI4324DY-T1-E3 is available in a variety of packages, including TO-92 (3 pin), SOT-23 (3 pin) and SOD-123FL (3 pin) packages. It is easy to use, highly reliable and it is also capable of withstanding high temperatures, making it an ideal choice for many applications.
The SI4324DY-T1-E3 is a fantastic and versatile single N-channel MOSFET. It has many uses in various applications and can be used in both low-side and high-side switch configurations. Its fast switching speed and low conduction losses make it an ideal choice for all kinds of low-power applications such as power controllers, switching circuits and even for voltage regulators. Its tough construction and high temperature tolerance mean it is a highly reliable and durable part that can be used in many different types of applications.
The specific data is subject to PDF, and the above content is for reference
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