SI4388DY-T1-E3

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The SI4388DY-T1-E3 is an MOSFET array designed for use in switchmode circuits. It offers a low on-resistance, high voltage rating and low gate charge. It is an integrated, low-power solution for switchmode applications in high-performance, high-density circuits.

Therefore, SI4388DY-T1-E3 is suitable for broad applications in switchmode circuits, including motor drive, power supply management, power conversion and high-temperature switching applications. It can also be used for power management for digital systems such as embedded controllers, clocks, displays and portable devices.

The working principle of SI4388DY-T1-E3 is based on the static operation of MOSFET. The structure of MOSFET consists of two Regions of Opposite Types (ROTs), namely the source and drain. The voltage applied to the gate of the MOSFET creates a thin layer of inversion charge at the surface between the two ROTs. This layer of charge create an electric field that attracts majority carriers to the surface. The result is a low-resistance path between the source and drain.

This low-resistance channel is the working principle of SI4388DY-T1-E3. When the voltage applied to the gate exceeds the threshold voltage VTH, the FET begins to conduct. The current flowing through the channel is controlled by the gate voltage VG. When the gate voltage is increased, the drain current will increase. When the gate voltage is decreased, the drain current will decrease.

SI4388DY-T1-E3 also offers high voltage rating and low gate charge. This makes the device suitable for high-frequency switching applications. The device occupies a small footprint, making it ideal for space-constrained applications. The device also has an ESD protection rated up to 8 kV, making it suitable for electrostatic sensitive applications.

In summary, the SI4388DY-T1-E3 is a low-power MOSFET array designed for use in switchmode circuits. It has a low-on resistance and high voltage rating, making it suitable for a variety of applications. It is ideal for high-frequency switching applications due to its low gate charge and small footprint. It also offers ESD protection rated up to 8 kV, making it suitable for electrostatic sensitive applications.

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