SI4368DY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4368DY-T1-GE3-ND

Manufacturer Part#:

SI4368DY-T1-GE3

Price: $ 1.24
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 17A 8-SOIC
More Detail: N-Channel 30V 17A (Ta) 1.6W (Ta) Surface Mount 8-S...
DataSheet: SI4368DY-T1-GE3 datasheetSI4368DY-T1-GE3 Datasheet/PDF
Quantity: 1000
2500 +: $ 1.11776
Stock 1000Can Ship Immediately
$ 1.24
Specifications
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8340pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The Si4368DY-T1-GE3 is a wide dynamic range, low Qg MOSFET produced by Vishay Intertechnology. It is a single-phase silicon controlled rectifier (SCR) with a drain-source voltage rating of 900 volts that can be used for blocking, switching, and phase control applications.

The Si4368DY-T1-GE3 has a drain-source breakdown voltage of 900V (V(BR)DSS), a gate-source breakover voltage of 8V (V(BR)GSS) and a total gate charge of 4.1nC (Qg). It is designed with Vishay Intertechnology\'s low Qg MOSFET process and is capable of providing the lowest gate charge of any MOSFET in its class.

The Si4368DY-T1-GE3 is ideal for use in applications where reliable high power switching is required. It is particularly suitable for intra-board and inter-board switching applications including power factor correction, power line surge protection, motor control, and uninterruptible power supply (UPS) systems. It is also suitable for high power switching applications such as solar inverters, voltage regulators, and DC-DC converters.

The Si4368DY-T1-GE3 is based on silent bipolar mode operation for low switching losses, allowing for efficient operation and low gate-source voltage. This MOSFET also supports extremely low on-state resistance, resulting in improved conduction and high speed switching. The drain-source voltage rating of 900V enables the MOSFET to handle high voltages, while the low gate-source turn-on voltage allows it to start switching with minimal gate-source voltage.

In addition, the Si4368DY-T1-GE3 is designed with high surge withstand capability and low total-source capacitance which allows for reduced switching times and improved thermal performance. It is extremely robust, with a rugged SU-8 rated package, and is rated for 125°C junction temperature.

The Si4368DY-T1-GE3 is easy to use and requires minimal external components, making it ideal for applications where cost-saving and space-limiting are concerns. This MOSFET can be easily implemented in circuits with low switching losses and is capable of delivering reliable performance for long periods of time.

The specific data is subject to PDF, and the above content is for reference

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