SI4336DY-T1-E3

The SI4336DY-T1-E3 is a single N-Channel Enhancement-mode Field Effect Transistor (FET). It is made of silicon and is part of the MOSFET category of transistors.

The SI4336DY-T1-E3 is a low power, low voltage transistor designed to provide a wide range of applications. It can be used in both analog and digital circuits, as well as in voltage-controlled oscillators, power amplifiers, and in switch circuits.

Application Field

The SI4336DY-T1-E3 is primarily used in high-reliability industrial and automotive applications such as in the control and protection circuits of air compressor controls, chargers, DC/DC converters, electronic switches, electric motors, and gas sensors.

The SI4336DY-T1-E3 is also suitable for low-noise amplifiers, PID controllers, and high-frequency inverters. In addition, its low on-state resistance makes it suitable for off-state switching, LED dimming, and motor control applications.

Working Principle

The main principle of a MOSFET is the use of an electric field to control current between drain and source. In a MOSFET, the electric field is provided by a gate voltage and the amount of current that is allowed to pass through the transistor is controlled by this gate voltage.

The SI4336DY-T1-E3 is a single-poled MOSFET. With a single poled MOSFET, the gate voltage controls the amount of current that is allowed to flow from the drain to the source. The higher the gate voltage, the more current is allowed to flow.

The SI4336DY-T1-E3 has a maximum rating of 30V for its gate voltage. This means that the gate voltage should not exceed 30V. If the gate voltage exceeds 30V, the transistor will be damaged and may even fail.

The SI4336DY-T1-E3 also has a maximum drain-source ON-resistance of 0.01Ω. This means that the maximum amount of current that can flow through the transistor is limited by its ON-resistance. By controlling the gate voltage, the amount of current that is allowed to flow through the transistor can be controlled.

Conclusion

The SI4336DY-T1-E3 is a single N-Channel Enhancement-mode Field Effect Transistor (FET) made of silicon and part of the MOSFET category of transistors. It is primarily used in high-reliability industrial and automotive applications such as in the control and protection circuits of air compressor controls, chargers, DC/DC converters, electronic switches, electric motors, and gas sensors. The main principle of working of the SI4336DY-T1-E3 is the use of an electric field to control current between drain and source.