Allicdata Part #: | SI4354DY-T1-E3-ND |
Manufacturer Part#: |
SI4354DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 9.5A 8-SOIC |
More Detail: | N-Channel 30V 9.5A (Ta) 2.5W (Ta) Surface Mount 8-... |
DataSheet: | SI4354DY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 10.5nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 16.5 mOhm @ 9.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4354DY-T1-E3 is a single-gate depletion-mode, MOSFET (or Metal Oxide Semiconductor Field-Effect Transistor). They are capable of both amplifying and switching electronic signals and only require a small voltage and current to control the current between the source and drain. This makes them increasingly popular, due to their versatility and low power consumption.
The type of field-effect transistor is what determines the application field for the SI4354DY-T1-E3. Devices such as the SI4354DY-T1-E3 are generally used for their enhanced functional capabilities such as low power consumption, small size and high frequency operation. This makes them ideal for use in power electronics, high-frequency switching or audio applications in small, portable devices.
The principle of operation for this type of MOSFET is fairly simple – a small change in voltage between the gate and the source generates an electrical field, altering the conductance between the source and the drain. This allows the device to effectively switch between a conducting and non-conducting state, with the voltage applied to the gate determining the device’s operating state.
The SI4354DY-T1-E3 is a jFET (junction gate field-effect transistor) that provides low on-resistance to ensure high switching speed. The device is designed to provide fast switching between two different drain-source voltages, making it ideal for use in high-frequency applications. As well as this, the device offers significantly low ‘gate-to-drain feedback capacitance’ and may be used in conjunction with other components to achieve enhanced performance in filtering or switching applications.
The SI4354DY-T1-E3 is an ideal choice for applications which require fast switching speed, low power consumption and a small form factor. Its electrical characteristics and small size make it ideal for use in high-frequency, high-power applications such as power conversion and audio switching. Its low gate-to-drain feedback capacitance also allows for enhanced performance in filtering applications. These features make the SI4354DY-T1-E3 a popular choice for a variety of electronic applications.
The specific data is subject to PDF, and the above content is for reference
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