SI4386DY-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI4386DY-T1-GE3 is a high-performance, N-channel Powertrench® MOSFET from Vishay Siliconix. It is a versatile, low R_DS(on) single MOSFET suitable for many switching and linear applications. This article will provide an overview of the application field and working principle of the SI4386DY-T1-GE3.

Applications

The SI4386DY-T1-GE3 MOSFET can be used in a variety of applications, such as battery powered portable devices, audio/video devices, appliance control, automotive, telecom/networking, and more. It is especially well-suited for high-current, high-frequency applications, such as power converters, DC/DC conversion, and Pulse Width Modulation (PWM) switching.

Features

The SI4386DY-T1-GE3 MOSFET offers a number of desirable features. For example, it has an extremely low on-state resistance (R_DS(on) of 16 mΩ max @ V_GS = 10 V). This low R_DS(on) makes it well-suited for high current applications. It also has a very fast switching speed, with a turn-on/turn-off time of 17/28 ns max @ V_DD = 10 V. Furthermore, it has a wide gate charge range (Q_G) of 4.3 nC max to 0.30 nC min. Finally, it has a low gate threshold voltage (V_GS(th)) of 1.8 V. These features make the SI4386DY-T1-GE3 an excellent choice for a variety of high-performance applications.

Package Variants

The SI4386DY-T1-GE3 MOSFET is available in three package variants: a tiny Click™ package, a small 3x2 mm Right Angle Surface Mount (RAC) package, and a conventional leadless PowerPAK® SO-8 package. This provides users with a wide variety of size and form factor options.

Working Principle

A MOSFET is a type of transistor, created using the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) technology. This technology is based on the principle of charges accumulating at the surface of the MOSFET structure, due to the application of an electric field to a section of the structure itself. When the electric field is strong enough, the accumulated charges will form a conductive path, allowing current to flow. This current flow is then controlled by the applied electric field.

The SI4386DY-T1-GE3 MOSFET utilizes this principle in order to provide ultra-low R_DS(on) and fast turn-on/turn-off times. It is designed with an N-channel MOSFET structure, and contains both a gate and a channel. A voltage applied to the gate with respect to the channel will induce the formation of a conductive path (or channel) across the channel. When this path is closed, the MOSFET turns on, allowing current to flow and providing V_DS (channel to source voltage), which is a measure of the load resistance. When the voltage on the gate is removed, the channel between the source and drain closes, and the MOSFET turns off, blocking the flow of current. This allows the SI4386DY-T1-GE3 to be used as an efficient and reliable power switch.

Conclusion

In summary, the SI4386DY-T1-GE3 is a high-performance, N-channel Powertrench® MOSFET from Vishay Siliconix. It is suitable for a wide range of applications, including portable battery devices, audio/video devices, appliance control, automotive, telecom/networking, and more. Its desirable features, such as very low on-state resistance, very fast turn-on/turn-off time, wide gateCharge range and low gate threshold voltage make it an excellent choice for high-current, high-frequency applications. Its three package variants provide users with the flexibility to choose a package that best suits their design requirements. Its working principle, based on the MOSFET technology, allows it to provide efficient and reliable power switching.

The specific data is subject to PDF, and the above content is for reference