SI4398DY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4398DY-T1-GE3-ND

Manufacturer Part#:

SI4398DY-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 20V 19A 8-SOIC
More Detail: N-Channel 20V 19A (Ta) 1.6W (Ta) Surface Mount 8-S...
DataSheet: SI4398DY-T1-GE3 datasheetSI4398DY-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5620pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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SI4398DY-T1-GE3 Application Field and Working Principle

The SI4398DY-T1-GE3 is a General Enhanced 3V N-Channel MOSFET, which is typically used as a low-side switch in automotive designs. Also, it’s rectangular body with longer drain to source leads makes it ideal for applications with height limitations and tightest field of density. The SI4398DY-T1-GE3’s manufacturing process uses trench isolation, a tubby design, and a cell made of a depleted region controlled by its gate. The device has a maximum drain-source voltage of 30V and a drain current of 5.8A.

Typically, the SI4398DY-T1-GE3 is used as an on/off switch in automotive power distribution systems. The device is well-suited for use in applications like power supplies and LED backlighting. Its optimized input and output protection, as well as its ESD rating of <20V, makes it an ideal choice for automotive designs. In addition, it has improved thermal performance and a fast switching speed to meet the requirements of a wide variety of automotive applications.

The SI4398DY-T1-GE3’s working principle is based on the transfer of charge carriers (electrons or holes) from drain to source when the gate voltage is more positive than the drain voltage by a certain threshold (Vth). As the charge carriers move, they induce a drain current. The magnitude of drain current is a function of the strength of the gate voltage, which is determined by the external bias voltage applied to the gate for operation.

Moreover, the device features low on-resistance, which helps reduce power loss during on-state operations. Its low gate capacitance makes it suitable for switching high speed applications. Furthermore, its high breakdown voltage (BVDSS) helps to protect the device from any over-voltage conditions.

The SI4398DY-T1-GE3’s application field and working principle make it the ideal choice for low-side switching applications in automotive designs. It offers excellent thermal performance, fast switching speed and low-on resistance, which make it an appealing choice for various automotive applications.

The specific data is subject to PDF, and the above content is for reference

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