Allicdata Part #: | SI4398DY-T1-GE3-ND |
Manufacturer Part#: |
SI4398DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 19A 8-SOIC |
More Detail: | N-Channel 20V 19A (Ta) 1.6W (Ta) Surface Mount 8-S... |
DataSheet: | SI4398DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5620pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SI4398DY-T1-GE3 Application Field and Working Principle
The SI4398DY-T1-GE3 is a General Enhanced 3V N-Channel MOSFET, which is typically used as a low-side switch in automotive designs. Also, it’s rectangular body with longer drain to source leads makes it ideal for applications with height limitations and tightest field of density. The SI4398DY-T1-GE3’s manufacturing process uses trench isolation, a tubby design, and a cell made of a depleted region controlled by its gate. The device has a maximum drain-source voltage of 30V and a drain current of 5.8A.
Typically, the SI4398DY-T1-GE3 is used as an on/off switch in automotive power distribution systems. The device is well-suited for use in applications like power supplies and LED backlighting. Its optimized input and output protection, as well as its ESD rating of <20V, makes it an ideal choice for automotive designs. In addition, it has improved thermal performance and a fast switching speed to meet the requirements of a wide variety of automotive applications.
The SI4398DY-T1-GE3’s working principle is based on the transfer of charge carriers (electrons or holes) from drain to source when the gate voltage is more positive than the drain voltage by a certain threshold (Vth). As the charge carriers move, they induce a drain current. The magnitude of drain current is a function of the strength of the gate voltage, which is determined by the external bias voltage applied to the gate for operation.
Moreover, the device features low on-resistance, which helps reduce power loss during on-state operations. Its low gate capacitance makes it suitable for switching high speed applications. Furthermore, its high breakdown voltage (BVDSS) helps to protect the device from any over-voltage conditions.
The SI4398DY-T1-GE3’s application field and working principle make it the ideal choice for low-side switching applications in automotive designs. It offers excellent thermal performance, fast switching speed and low-on resistance, which make it an appealing choice for various automotive applications.
The specific data is subject to PDF, and the above content is for reference
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