SI4848DY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI4848DY-T1-E3TR-ND

Manufacturer Part#:

SI4848DY-T1-E3

Price: $ 0.48
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 150V 2.7A 8-SOIC
More Detail: N-Channel 150V 2.7A (Ta) 1.5W (Ta) Surface Mount 8...
DataSheet: SI4848DY-T1-E3 datasheetSI4848DY-T1-E3 Datasheet/PDF
Quantity: 64
1 +: $ 0.48000
10 +: $ 0.46560
100 +: $ 0.45600
1000 +: $ 0.44640
10000 +: $ 0.43200
Stock 64Can Ship Immediately
$ 0.48
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI4848DY-T1-E3 is a single P-Channel Enhancement Mode MOSFET, which is a type of electronic component used in many electronic devices, from low to high power. It is often used to switch heavy loads, such as motors, solenoids, and lighting, and can also be used to control power to other components and manage energy flow. The SI4848DY-T1-E3 is suitable for a wide variety of applications, and is often used in automotive, power management, industrial, and consumer electronics.

The SI4848DY-T1-E3 is designed to handle a high current load, with a maximum continuous drain current of 48 A at 25°C. Its drain source breakdown voltage is 60 V, and it is fully characterized for operations from -55°C to 150°C. The SI4848DY-T1-E3 also has an on resistance of 1.86 ohms, allowing for improved efficiency when switching heavier loads, resulting in less heat dissipation.

The SI4848DY-T1-E3 is a P-Channel Enhancement Mode MOSFET, which is one of the most commonly used types of transistor. It is a three-terminal device, with a source, drain, and gate. The transistor’s gate is the input, and it is used to control the flow of electric current in a circuit. In a MOSFET, the source is connected to the negative terminal of the power source, while the drain is connected to the positive terminal. When a voltage is applied to the gate, it creates an electric field between the source and drain, allowing current to flow. By adjusting the voltage applied to the gate, the current through the transistor can be adjusted accordingly.

When power is applied to the gate of the SI4848DY-T1-E3 MOSFET, the gate voltage controls the amount of current that can flow between the source and drain. This allows for precise control of the current without needing to adjust the voltage of the power supply, which can result in improved efficiency and lower power dissipation. Additionally, the SI4848DY-T1-E3 has a very low on resistance, allowing it to handle high currents without overloading the circuit.

The SI4848DY-T1-E3 is a highly versatile MOSFET, offering a wide range of applications. It can be used to switch loads such as motors, lighting, and relays, as well as providing precise control of power to other components. It is often used in automotive systems, where precise control is needed for efficient power management, as well as in a number of consumer and industrial devices. The SI4848DY-T1-E3 is a reliable and efficient MOSFET that is suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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