SI4823DY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI4823DY-T1-E3-ND

Manufacturer Part#:

SI4823DY-T1-E3

Price: $ 0.19
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 20V 4.1A 8-SOIC
More Detail: P-Channel 20V 4.1A (Tc) 1.7W (Ta), 2.8W (Tc) Surfa...
DataSheet: SI4823DY-T1-E3 datasheetSI4823DY-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.19000
10 +: $ 0.18430
100 +: $ 0.18050
1000 +: $ 0.17670
10000 +: $ 0.17100
Stock 1000Can Ship Immediately
$ 0.19
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.8W (Tc)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Series: LITTLE FOOT®
Rds On (Max) @ Id, Vgs: 108 mOhm @ 3.3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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The SI4823DY-T1-E3 is a N-channel, depletion-mode Field-Effect Transistor (FET). It is a type of single FET, meaning that it has just one gate, source, and drain terminal. The device, designed by Vishay Intertechnology, is particularly suitable for driving power MOSFET and IGBTs, thanks to its low on-resistance and low input capacitance.

The SI4823DY-T1-E3 is widely used in various applications due to its high performance despite its small size and low cost. As a power MOSFET, it is widely used in DC/DC converters for server or disk drive board power supplies, high frequency motor controllers, solar and other power inverters, DC-DC converters for laptop computers, and high frequency power amplifier linear voltage regulators.

The main principle of operation of the SI4823DY-T1-E3 is the same as any other FET. The source and drain regions, made of p-type semiconductor material, are separated and insulated by the oxide layer on the substrate. When voltage is applied to the gate terminal, a difference in doping profile is created in the p-Channel, which attracts mobile charge carriers to the drain-source channel, creating a conductive path. The amount of current flowing through the FET is proportional to the voltage applied at the gate terminal and is referred to as drain current (ID). The device is also characterized by a low gate-to-source capacitance, which helps to reduce the input capacitance and increases the speed of the switching action.

In addition to its high-power applications, the SI4823DY-T1-E3 can also be used in many low-power applications such as LED driving, DC motor controllers, and AC lighting converters. In LED driving applications, the device is used to control a string of LEDs, while in DC motor controllers, it is used to control the speed of a DC motor. AC lighting converters are another application of the device, where it is used to control the intensity of the light output. In all these applications, the device provides excellent performance, thanks to its low on-resistance, low input capacitance, and fast switching action.

Overall, the SI4823DY-T1-E3 is a versatile and high-performance single FET, thanks to its low on-resistance, low gate-to-source capacitance, and fast switching action. This makes it suitable for a wide range of applications, from high-power applications such as driving power MOSFETs and IGBTs to low-power applications such as LED driving, DC motor controllers, and AC lighting converters.

The specific data is subject to PDF, and the above content is for reference

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