SI4880DY-T1-GE3

Vgs(th) (Max) @ Id:	1.8V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	25nC @ 5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	8.5 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	--
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The SI4880DY-T1-GE3 is a power field effect transistor (FET) that is used in a wide range of applications. The FET is a type of transistor that is capable of handling large amounts of power. In this article, we will look at the application field and working principle of the SI4880DY-T1-GE3.The SI4880DY-T1-GE3 is an N-channel enhancement-mode MOSFET. This means that it is designed to be a switch and can be used to turn devices on and off. It is capable of switching voltage signals of up to 30V and can handle large amounts of current up to a maximum of 4A. This makes it ideal for use in high-power applications where a device needs to be switched on and off quickly and efficiently.The SI4880DY-T1-GE3 is used in a range of applications including power regulators, switching power supplies, DC-DC converter circuits and high current amplifiers. It is also used in low voltage applications such as LED or LCD backlights and in solar cell power controllers.The working principle of the SI4880DY-T1-GE3 is based on the fact that an electrical field can be used to move electrons from one area to another. In the case of the SI4880DY-T1-GE3, the electrical field is created when a voltage is applied across the Gate and Drain terminals. The electrons are then forced to move through the channels contained within the device. As the electrons move through the channels, a current is created. The current then flows from the Source to the Drain terminals.In order for the SI4880DY-T1-GE3 to be effective, it must be properly mounted and connected. The drain and source terminals should be properly connected to the circuit, as any incorrect connections can cause the device to fail. The body of the FET should also be properly insulated from the board, as this will prevent the FET from overheating.The SI4880DY-T1-GE3 is a powerful and reliable FET that is used in a variety of applications. It is capable of handling large amounts of power and is well suited for use in high-power applications such as switching power supplies, LED/LCD backlights, and solar cell power controllers. It is important to ensure that the SI4880DY-T1-GE3 is properly mounted and connected in order to ensure its effective operation.

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